A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS

Hyeonseok Hwang, Chan Hui Jeong, Chankeun Kwon, Hoonki Kim, Youngmok Jeong, Bumsoo Lee, Soo-Won Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-μm triple-well CMOS technology.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 2012 Dec 32012 Dec 5

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period12/12/312/12/5

Fingerprint

Broadband amplifiers
Low noise amplifiers
Threshold voltage
Bandwidth
Networks (circuits)

Keywords

  • CMOS
  • Deep N-well
  • LNA
  • Triple-well

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hwang, H., Jeong, C. H., Kwon, C., Kim, H., Jeong, Y., Lee, B., & Kim, S-W. (2012). A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482831] https://doi.org/10.1109/EDSSC.2012.6482831

A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS. / Hwang, Hyeonseok; Jeong, Chan Hui; Kwon, Chankeun; Kim, Hoonki; Jeong, Youngmok; Lee, Bumsoo; Kim, Soo-Won.

2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482831.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hwang, H, Jeong, CH, Kwon, C, Kim, H, Jeong, Y, Lee, B & Kim, S-W 2012, A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482831, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 12/12/3. https://doi.org/10.1109/EDSSC.2012.6482831
Hwang H, Jeong CH, Kwon C, Kim H, Jeong Y, Lee B et al. A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482831 https://doi.org/10.1109/EDSSC.2012.6482831
Hwang, Hyeonseok ; Jeong, Chan Hui ; Kwon, Chankeun ; Kim, Hoonki ; Jeong, Youngmok ; Lee, Bumsoo ; Kim, Soo-Won. / A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS. 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012.
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