A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS

Hyeonseok Hwang, Chan Hui Jeong, Chankeun Kwon, Hoonki Kim, Youngmok Jeong, Bumsoo Lee, Soo Won Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-μm triple-well CMOS technology.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 2012 Dec 32012 Dec 5

Publication series

Name2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period12/12/312/12/5

Keywords

  • CMOS
  • Deep N-well
  • LNA
  • Triple-well

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS'. Together they form a unique fingerprint.

  • Cite this

    Hwang, H., Jeong, C. H., Kwon, C., Kim, H., Jeong, Y., Lee, B., & Kim, S. W. (2012). A 1.8V wide-band LNA design in 0.18-μm triple-well CMOS. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482831] (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012). https://doi.org/10.1109/EDSSC.2012.6482831