Abstract
This brief proposes a data-dependent swing-limited on-chip signaling for single-ended global I/O in the SDRAM in a 0.13-μm CMOS technology. The SDRAM has multiple global I/O lines for sending and receiving data, which results in a large delay deviation owing to the multi-drop bus topology and a large RC load. Minimizing the delay and its deviation improves the speed of the SDRAM. With the proposed technique, the maximum speed is 2 Gb/s/ch, which is increased by more than 120% under the same channel condition. The power consumption is also reduced compared to that of the conventional scheme; the energy efficiency is 104 fJ/b/mm, respectively.
Original language | English |
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Article number | 7279097 |
Pages (from-to) | 1207-1211 |
Number of pages | 5 |
Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
Volume | 64 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2017 Oct |
Keywords
- Memory
- on-chip signaling
- single-ended global I/O
- synchronous dynamic random access memory (SDRAM)
ASJC Scopus subject areas
- Electrical and Electronic Engineering