A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology

Daekeun Yoon, Jae-Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 dB) of -13 dBm. The fabricated chip with an area of 600 × 400 μm2 including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.

Original languageEnglish
Article number6842678
Pages (from-to)557-559
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume24
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

BiCMOS technology
voltage controlled oscillators
Variable frequency oscillators
receivers
chips
Mixer circuits
extremely high frequencies
pumping
buffers
direct current
oscillators
Imaging techniques

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology. / Yoon, Daekeun; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 24, No. 8, 6842678, 01.01.2014, p. 557-559.

Research output: Contribution to journalArticle

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