A 210-GHz fT SiGe HBT with a non-self-aligned structure

S. J. Jeng, B. Jagannathan, J. S. Rieh, J. Johnson, K. T. Schonenberg, D. Greenberg, A. Stricker, H. Chen, M. Khater, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

A record 210-GHz fT SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz fT. The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.

Original languageEnglish
Pages (from-to)542-544
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number11
DOIs
Publication statusPublished - 2001 Nov

Keywords

  • Bipolar transistors
  • Germanium
  • Semiconductor heterojunctions
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Jeng, S. J., Jagannathan, B., Rieh, J. S., Johnson, J., Schonenberg, K. T., Greenberg, D., Stricker, A., Chen, H., Khater, M., Ahlgren, D., Freeman, G., Stein, K., & Subbanna, S. (2001). A 210-GHz fT SiGe HBT with a non-self-aligned structure. IEEE Electron Device Letters, 22(11), 542-544. https://doi.org/10.1109/55.962657