A 210-GHz fT SiGe HBT with a non-self-aligned structure

S. J. Jeng, B. Jagannathan, J. S. Rieh, J. Johnson, K. T. Schonenberg, D. Greenberg, A. Stricker, H. Chen, M. Khater, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna

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