A 220-320 GHz single-pole single-throw switch

Younghwan Kim, Hyunkyu Lee, Sanggeun Jeon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents a single-pole single-throw (SPST) switch operating over the entire WR-3 band. The SPST switch is composed of two shunt transistors and transmission lines in between to resonate the off capacitance of the transistors. The switch is implemented using a 250-nm InP DHBT technology. The measured insertion loss and isolation are no more than 2.9 dB and 13.1 dB, respectively, from 220 to 320 GHz. The return loss is better than 10.2 dB over the same bandwidth.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
Publication statusPublished - 2016 Sep 27
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
Duration: 2016 Aug 242016 Aug 26

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan, Province of China
CityTaipei
Period16/8/2416/8/26

    Fingerprint

Keywords

  • InP DHBT
  • OOK modulator
  • RF switch
  • SPST
  • WR-3

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Kim, Y., Lee, H., & Jeon, S. (2016). A 220-320 GHz single-pole single-throw switch. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578184] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578184