A 248-262 GHz InP HBT VCO with interesting tuning behavior

Jongwon Yun, Namhyung Kim, Daekeun Yoon, Hyunchul Kim, Sanggeun Jeon, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

Original languageEnglish
Article number6824863
Pages (from-to)560-562
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume24
Issue number8
DOIs
Publication statusPublished - 2014 Aug

Keywords

  • Frequency control
  • heterojunction bipolar transistors (HBT)
  • voltage-controlled oscillators (VCO)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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