A 248-262 GHz InP HBT VCO with interesting tuning behavior

Jongwon Yun; Namhyung Kim; Daekeun Yoon; Hyunchul Kim; Sanggeun Jeon; Jae Sung Rieh

doi:10.1109/LMWC.2014.2324753

A 248-262 GHz InP HBT VCO with interesting tuning behavior

Jongwon Yun, Namhyung Kim, Daekeun Yoon, Hyunchul Kim, Sanggeun Jeon, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

Original language	English
Article number	6824863
Pages (from-to)	560-562
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	24
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2014.2324753
Publication status	Published - 2014 Aug

Keywords

Frequency control
heterojunction bipolar transistors (HBT)
voltage-controlled oscillators (VCO)

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2014.2324753

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title = "A 248-262 GHz InP HBT VCO with interesting tuning behavior",

abstract = "A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.",

keywords = "Frequency control, heterojunction bipolar transistors (HBT), voltage-controlled oscillators (VCO)",

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AU - Kim, Namhyung

AU - Yoon, Daekeun

AU - Kim, Hyunchul

AU - Jeon, Sanggeun

AU - Rieh, Jae Sung

PY - 2014/8

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N2 - A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

AB - A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

KW - Frequency control

KW - heterojunction bipolar transistors (HBT)

KW - voltage-controlled oscillators (VCO)

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JO - IEEE Microwave and Wireless Components Letters

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A 248-262 GHz InP HBT VCO with interesting tuning behavior

Abstract

Keywords

ASJC Scopus subject areas

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