A 248-262 GHz InP HBT VCO with interesting tuning behavior

Jongwon Yun; Namhyung Kim; Daekeun Yoon; Hyunchul Kim; Sanggeun Jeon; Jae-Sung Rieh

doi:10.1109/LMWC.2014.2324753

A 248-262 GHz InP HBT VCO with interesting tuning behavior

Jongwon Yun, Namhyung Kim, Daekeun Yoon, Hyunchul Kim, Sanggeun Jeon, Jae-Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

Original language	English
Article number	6824863
Pages (from-to)	560-562
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	24
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2014.2324753
Publication status	Published - 2014 Jan 1

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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Yun, J., Kim, N., Yoon, D., Kim, H., Jeon, S., & Rieh, J-S. (2014). A 248-262 GHz InP HBT VCO with interesting tuning behavior. IEEE Microwave and Wireless Components Letters, 24(8), 560-562. [6824863]. https://doi.org/10.1109/LMWC.2014.2324753

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AU - Jeon, Sanggeun

AU - Rieh, Jae-Sung

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