Abstract
A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.
| Original language | English |
|---|---|
| Article number | 6824863 |
| Pages (from-to) | 560-562 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 24 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
A 248-262 GHz InP HBT VCO with interesting tuning behavior. / Yun, Jongwon; Kim, Namhyung; Yoon, Daekeun; Kim, Hyunchul; Jeon, Sanggeun; Rieh, Jae-Sung.
In: IEEE Microwave and Wireless Components Letters, Vol. 24, No. 8, 6824863, 01.01.2014, p. 560-562.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A 248-262 GHz InP HBT VCO with interesting tuning behavior
AU - Yun, Jongwon
AU - Kim, Namhyung
AU - Yoon, Daekeun
AU - Kim, Hyunchul
AU - Jeon, Sanggeun
AU - Rieh, Jae-Sung
PY - 2014/1/1
Y1 - 2014/1/1
N2 - A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.
AB - A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.
KW - Frequency control
KW - heterojunction bipolar transistors (HBT)
KW - voltage-controlled oscillators (VCO)
UR - http://www.scopus.com/inward/record.url?scp=84905702380&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84905702380&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2014.2324753
DO - 10.1109/LMWC.2014.2324753
M3 - Article
AN - SCOPUS:84905702380
VL - 24
SP - 560
EP - 562
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 8
M1 - 6824863
ER -