A 248-262 GHz InP HBT VCO with interesting tuning behavior

Jongwon Yun, Namhyung Kim, Daekeun Yoon, Hyunchul Kim, Sanggeun Jeon, Jae-Sung Rieh

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

Original languageEnglish
Article number6824863
Pages (from-to)560-562
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume24
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

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voltage controlled oscillators
Variable frequency oscillators
Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Tuning
tuning
varactor diodes
Varactors
Transistors
transistors
inductance
Inductance
emitters
output

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

A 248-262 GHz InP HBT VCO with interesting tuning behavior. / Yun, Jongwon; Kim, Namhyung; Yoon, Daekeun; Kim, Hyunchul; Jeon, Sanggeun; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 24, No. 8, 6824863, 01.01.2014, p. 560-562.

Research output: Contribution to journalArticle

Yun, Jongwon ; Kim, Namhyung ; Yoon, Daekeun ; Kim, Hyunchul ; Jeon, Sanggeun ; Rieh, Jae-Sung. / A 248-262 GHz InP HBT VCO with interesting tuning behavior. In: IEEE Microwave and Wireless Components Letters. 2014 ; Vol. 24, No. 8. pp. 560-562.
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