A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network

Sooyeon Kim; Daekeun Yoon; Jae Sung Rieh

doi:10.1109/TTHZ.2019.2923556

A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network

Sooyeon Kim, Daekeun Yoon, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.

Original language	English
Article number	8738859
Pages (from-to)	449-462
Number of pages	14
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	9
Issue number	5
DOIs	https://doi.org/10.1109/TTHZ.2019.2923556
Publication status	Published - 2019 Sept

Keywords

Complementary metal-oxide-semiconductor (CMOS)
Coupled lines
Harmonic generation
Millimeter wave
Oscillators
Ring oscillators
Submillimeter wave
Terahertz
Triple push

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

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10.1109/TTHZ.2019.2923556

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title = "A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network",

abstract = "A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.",

keywords = "Complementary metal-oxide-semiconductor (CMOS), Coupled lines, Harmonic generation, Millimeter wave, Oscillators, Ring oscillators, Submillimeter wave, Terahertz, Triple push",

author = "Sooyeon Kim and Daekeun Yoon and Rieh, {Jae Sung}",

note = "Funding Information: Manuscript received December 27, 2018; revised April 25, 2019; accepted June 1, 2019. Date of publication June 18, 2019; date of current version September 2, 2019. This work was supported by the Institute of Information and Communications Technology Planning and Evaluation under Grant 2016-0-00185, funded by the Korea government (MSIT). (Corresponding author: Jae-Sung Rieh.) S. Kim and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: ryoungi@korea.ac.kr; jsrieh@korea.ac.kr). Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

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N1 - Funding Information: Manuscript received December 27, 2018; revised April 25, 2019; accepted June 1, 2019. Date of publication June 18, 2019; date of current version September 2, 2019. This work was supported by the Institute of Information and Communications Technology Planning and Evaluation under Grant 2016-0-00185, funded by the Korea government (MSIT). (Corresponding author: Jae-Sung Rieh.) S. Kim and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: ryoungi@korea.ac.kr; jsrieh@korea.ac.kr). Publisher Copyright: © 2011-2012 IEEE.

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N2 - A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.

AB - A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.

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KW - Terahertz

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A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network

Abstract

Keywords

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