A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

Jongwon Yun, Jungsoo Kim, Jae-Sung Rieh

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).

Original languageEnglish
Article number7827139
Pages (from-to)159-161
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume27
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

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Heterojunction bipolar transistors
Phase noise
bipolar transistors
heterojunctions
output
couplers
chips
oscillators
oscillations

Keywords

  • Heterojunction bipolar transistors
  • injection locked oscillators
  • power combining
  • submillimeter wave integrated circuits

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A 280-GHz 10-dBm Signal Source Based on InP HBT Technology. / Yun, Jongwon; Kim, Jungsoo; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 27, No. 2, 7827139, 01.02.2017, p. 159-161.

Research output: Contribution to journalArticle

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