A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

Changhwan Yi, Miguel Urteaga, Seung Ho Choi, Moonil Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

Original languageEnglish
Article number7805163
Pages (from-to)209-217
Number of pages9
JournalIEEE Transactions on Terahertz Science and Technology
Volume7
Issue number2
DOIs
Publication statusPublished - 2017 Mar 1

Keywords

  • InP HBT
  • preamplified detector
  • terahertz detector
  • terahertz receiver

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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