A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

Changhwan Yi, Miguel Urteaga, Seung Ho Choi, Moonil Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

Original languageEnglish
Article number7805163
Pages (from-to)209-217
Number of pages9
JournalIEEE Transactions on Terahertz Science and Technology
Volume7
Issue number2
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

preamplifiers
receivers
Detectors
detectors
amplifiers
systems simulation
Heterojunction bipolar transistors
Noise figure
bipolar transistors
heterojunctions
Networks (circuits)
augmentation
output
Electric potential
electric potential

Keywords

  • InP HBT
  • preamplified detector
  • terahertz detector
  • terahertz receiver

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier. / Yi, Changhwan; Urteaga, Miguel; Choi, Seung Ho; Kim, Moonil.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 7, No. 2, 7805163, 01.03.2017, p. 209-217.

Research output: Contribution to journalArticle

@article{106084c414af4f6699bdc160e86906c0,
title = "A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier",
abstract = "A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.",
keywords = "InP HBT, preamplified detector, terahertz detector, terahertz receiver",
author = "Changhwan Yi and Miguel Urteaga and Choi, {Seung Ho} and Moonil Kim",
year = "2017",
month = "3",
day = "1",
doi = "10.1109/TTHZ.2016.2639460",
language = "English",
volume = "7",
pages = "209--217",
journal = "IEEE Transactions on Terahertz Science and Technology",
issn = "2156-342X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

AU - Yi, Changhwan

AU - Urteaga, Miguel

AU - Choi, Seung Ho

AU - Kim, Moonil

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

AB - A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

KW - InP HBT

KW - preamplified detector

KW - terahertz detector

KW - terahertz receiver

UR - http://www.scopus.com/inward/record.url?scp=85008466058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008466058&partnerID=8YFLogxK

U2 - 10.1109/TTHZ.2016.2639460

DO - 10.1109/TTHZ.2016.2639460

M3 - Article

AN - SCOPUS:85008466058

VL - 7

SP - 209

EP - 217

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

SN - 2156-342X

IS - 2

M1 - 7805163

ER -