A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

Changhwan Yi; Miguel Urteaga; Seung Ho Choi; Moonil Kim

doi:10.1109/TTHZ.2016.2639460

A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

Changhwan Yi, Miguel Urteaga, Seung Ho Choi, Moonil Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz^0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

Original language	English
Article number	7805163
Pages (from-to)	209-217
Number of pages	9
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	7
Issue number	2
DOIs	https://doi.org/10.1109/TTHZ.2016.2639460
Publication status	Published - 2017 Mar

Keywords

InP HBT
preamplified detector
terahertz detector
terahertz receiver

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/TTHZ.2016.2639460

Cite this

@article{106084c414af4f6699bdc160e86906c0,

title = "A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier",

abstract = "A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.",

keywords = "InP HBT, preamplified detector, terahertz detector, terahertz receiver",

author = "Changhwan Yi and Miguel Urteaga and Choi, {Seung Ho} and Moonil Kim",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2017",

month = mar,

doi = "10.1109/TTHZ.2016.2639460",

language = "English",

volume = "7",

pages = "209--217",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

AU - Yi, Changhwan

AU - Urteaga, Miguel

AU - Choi, Seung Ho

AU - Kim, Moonil

PY - 2017/3

Y1 - 2017/3

N2 - A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

AB - A power detector integrated with a preamplifier is fabricated using a 250-nm InP double-heterojunction bipolar transistor technology for 280-GHz operation. The input RF signal to the detector is modulated at 20 kHz to decouple the output dc voltage from 1/f noise. The integrated receiver detector consists of a two-way balun, a differential preamplifier, a power detector. Breakout circuits of a standalone power detector and a test amplifier have been independently characterized. The test amplifier shows a gain of 18.1 dB and noise figure of 14 dB. The responsivity and noise equivalent power of the detector improve from 4.5 to 350 kV/W and from 10 to 0.13 pW/Hz0.5, respectively, at 280 GHz, with the addition of the preamplifier. The performance enhancements due to the preamplifier are in close agreement with the results predicted by advanced design system simulations.

KW - InP HBT

KW - preamplified detector

KW - terahertz detector

KW - terahertz receiver

UR - http://www.scopus.com/inward/record.url?scp=85008466058&partnerID=8YFLogxK

U2 - 10.1109/TTHZ.2016.2639460

DO - 10.1109/TTHZ.2016.2639460

M3 - Article

AN - SCOPUS:85008466058

SN - 2156-342X

VL - 7

SP - 209

EP - 217

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 2

M1 - 7805163

ER -

A 280-GHz InP DHBT Receiver Detector Containing a Differential Preamplifier

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this