A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface

Hyun Woo Lee, Soo Bin Lim, Junyoung Song, Ja Beom Koo, Dae Han Kwon, Jong Ho Kang, Yunsaing Kim, Young Jung Choi, Kunwoo Park, Byong Tae Chung, Chulwoo Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The process variation among 512 DRAM samples is more than 30% [1]. The performance variation of general circuits is predicted to be over 60% in 2012 [2]. In general, a single-die-based DRAM has a large process variation from chip to chip, which among other parameters, causes tAC (address access time) variation in the application system. In order to reduce the tAC variation, most highspeed SDRAMs adopt a delay-locked loop (DLL) at the cost of additional area and power consumption. For TSV-based stacked dies, large tAC variantion results in higher power consumption due to short circuit current from data conflicts among shared I/Os. Since the number of I/Os for TSV-based stacked DRAM (TSV DRAM) might be 512 or more [3], the additional power consumption can be very high. Even though it is desirable in mobile DRAM to exclude the DLL because of the power cost [3], TSV DRAM for high-speed operation partially adopts a DLL in the master die [4]. Our DLL-based data self-aligner (DBDA) reduces the data conflict time among stacked dies, consuming 283.2μW during read operation at 800Mb/s/pin. It dissipates 4.98μW in self-refresh mode with the help of leakage-current-reduction controller.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Pages48-49
Number of pages2
Volume55
DOIs
Publication statusPublished - 2012 May 11
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 2012 Feb 192012 Feb 23

Other

Other59th International Solid-State Circuits Conference, ISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period12/2/1912/2/23

Fingerprint

Dynamic random access storage
Silicon
Electric power utilization
Leakage currents
Short circuit currents
Controllers
Networks (circuits)
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, H. W., Lim, S. B., Song, J., Koo, J. B., Kwon, D. H., Kang, J. H., ... Kim, C. (2012). A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (Vol. 55, pp. 48-49). [6176873] https://doi.org/10.1109/ISSCC.2012.6176873

A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface. / Lee, Hyun Woo; Lim, Soo Bin; Song, Junyoung; Koo, Ja Beom; Kwon, Dae Han; Kang, Jong Ho; Kim, Yunsaing; Choi, Young Jung; Park, Kunwoo; Chung, Byong Tae; Kim, Chulwoo.

Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Vol. 55 2012. p. 48-49 6176873.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, HW, Lim, SB, Song, J, Koo, JB, Kwon, DH, Kang, JH, Kim, Y, Choi, YJ, Park, K, Chung, BT & Kim, C 2012, A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface. in Digest of Technical Papers - IEEE International Solid-State Circuits Conference. vol. 55, 6176873, pp. 48-49, 59th International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, United States, 12/2/19. https://doi.org/10.1109/ISSCC.2012.6176873
Lee HW, Lim SB, Song J, Koo JB, Kwon DH, Kang JH et al. A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Vol. 55. 2012. p. 48-49. 6176873 https://doi.org/10.1109/ISSCC.2012.6176873
Lee, Hyun Woo ; Lim, Soo Bin ; Song, Junyoung ; Koo, Ja Beom ; Kwon, Dae Han ; Kang, Jong Ho ; Kim, Yunsaing ; Choi, Young Jung ; Park, Kunwoo ; Chung, Byong Tae ; Kim, Chulwoo. / A 283.2μW 800Mb/s/pin DLL-based data self-aligner for Through-Silicon Via (TSV) interface. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Vol. 55 2012. pp. 48-49
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