A 290-GHz CMOS heterodyne integrated imager

Daekeun Yoon, Jungsoo Kim, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
Publication statusPublished - 2016 Sep 27
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China
Duration: 2016 Aug 242016 Aug 26

Other

Other2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan, Province of China
CityTaipei
Period16/8/2416/8/26

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Keywords

  • CMOS
  • CMOS integrated circuit
  • imaging
  • receivers

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Yoon, D., Kim, J., & Rieh, J-S. (2016). A 290-GHz CMOS heterodyne integrated imager. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578141] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578141