A 300-GHz high-power high-efficiency voltage-controlled oscillator with low power variation

Dongkyo Kim, Sanggeun Jeon

Research output: Contribution to journalArticle


This letter presents a 300-GHz voltage-controlled oscillator (VCO) with high output power and efficiency. The VCO core employs a differential Colpitts topology with inductive degeneration to facilitate a fundamental oscillation at 300 GHz. A common-base output buffer regulates the output power to minimize the power variation during the frequency tuning. The 300-GHz VCO is fabricated in a 130-nm InP double heterojunction bipolar transistor (DHBT) technology. The VCO exhibits a measured frequency tuning range of 9.9 GHz (294.9-304.8 GHz). The peak output power is measured to be 4.7 dBm at 297 GHz. The dc power consumption is 75.6 mW, leading to a high dc-to-RF conversion efficiency of 3.9%. The VCO output power is maintained nearly constant with only a 0.3-dB variation over the entire frequency tuning range. The phase noise is -86.6 dBc/Hz at 10-MHz offset frequency.

Original languageEnglish
Article number9076340
Pages (from-to)496-499
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Issue number5
Publication statusPublished - 2020 May


  • High-power source
  • InP double heterojunction bipolar transistor (DHBT)
  • terahertz source
  • voltage-controlled oscillator (VCO)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this