A 300-GHz integrated transmitter based on InP HBT technology

Heekang Son, Doyoon Kim, Kiryong Song, Jai Heon Cho, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 300-GHz integrated transmitter has been developed based on a 250-nm InP HBT technology. The transmitter is composed of a voltage-controlled oscillator (VCO) and a switch, which serve as a signal generator and a modulator, respectively. The VCO adopts a common-base cross coupled topology to acquire a high output power near 300 GHz. The output power and the frequency tuning range of the VCO are 3.8 dBm and 298 - 316.1 GHz, respectively. The switch, which employs a conventional traveling wave topology with three shunt transistor stages, exhibits an insertion loss of 2.4 dB and an isolation of 9.0 dB, both measured at 300 GHz. The integrated transmitter exhibits a peak output power of 0 dBm and -7 dBm for on- and off-state, respectively. The measured tuning range is 301.3 - 312.5 GHz.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages524-526
Number of pages3
ISBN (Electronic)9784902339451
DOIs
Publication statusPublished - 2019 Jan 16
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 2018 Nov 62018 Nov 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2018-November

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period18/11/618/11/9

Fingerprint

Variable frequency oscillators
Heterojunction bipolar transistors
Transmitters
Tuning
Switches
Topology
Signal generators
Insertion losses
Modulators
Transistors

Keywords

  • Heterojunction bipolar transistors
  • Switches
  • Transmitters
  • VCOs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Son, H., Kim, D., Song, K., Cho, J. H., & Rieh, J-S. (2019). A 300-GHz integrated transmitter based on InP HBT technology. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings (pp. 524-526). [8617621] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/APMC.2018.8617621

A 300-GHz integrated transmitter based on InP HBT technology. / Son, Heekang; Kim, Doyoon; Song, Kiryong; Cho, Jai Heon; Rieh, Jae-Sung.

2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 524-526 8617621 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Son, H, Kim, D, Song, K, Cho, JH & Rieh, J-S 2019, A 300-GHz integrated transmitter based on InP HBT technology. in 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings., 8617621, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2018-November, Institute of Electrical and Electronics Engineers Inc., pp. 524-526, 30th Asia-Pacific Microwave Conference, APMC 2018, Kyoto, Japan, 18/11/6. https://doi.org/10.23919/APMC.2018.8617621
Son H, Kim D, Song K, Cho JH, Rieh J-S. A 300-GHz integrated transmitter based on InP HBT technology. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 524-526. 8617621. (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.23919/APMC.2018.8617621
Son, Heekang ; Kim, Doyoon ; Song, Kiryong ; Cho, Jai Heon ; Rieh, Jae-Sung. / A 300-GHz integrated transmitter based on InP HBT technology. 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 524-526 (Asia-Pacific Microwave Conference Proceedings, APMC).
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