A 300-GHz SPST Switch with a New Coupled-Line Topology in 65-nm CMOS Technology

Jungsoo Kim, Sooyeon Kim, Kiryong Song, Jae-Sung Rieh

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A single-pole single-throw (SPST) switch operating around 300 GHz has been developed in this work based on a 65-nm CMOS technology. The SPST switch adopts a novel coupled-line topology, in which MOSFETs are employed as a variable impedance component at the through- and coupled- ports to achieve a large isolation. Over the measured frequency band of 220 – 320 GHz, a minimum insertion loss of 3.9 dB (at 303 GHz) and a maximum isolation of 66 dB (at 250 GHz) were obtained. This achieved peak isolation is the largest value obtained so far beyond 100 GHz with a CMOS switch. An isolation larger than 39 dB was maintained for the entire frequency band measured. The measured return loss showed a maximum value of 29 dB at 312 GHz.

Original languageEnglish
JournalIEEE Transactions on Terahertz Science and Technology
DOIs
Publication statusAccepted/In press - 2019 Jan 1

Keywords

  • CMOS technology
  • CMOS technology
  • coupled-line
  • Impedance
  • Insertion loss
  • Loss measurement
  • MOSFET
  • single-pole single-throw (SPST)
  • Switches
  • switches
  • Switching circuits
  • THz

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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