A 300-GHz SPST Switch with a new coupled-line topology in 65-nm CMOS technology

Jungsoo Kim, Sooyeon Kim, Kiryong Song, Jae Sung Rieh

Research output: Contribution to journalReview articlepeer-review

2 Citations (Scopus)

Abstract

A single-pole single-throw (SPST) switch operating around 300 GHz has been developed in this letter based on a 65-nm CMOS technology. The SPST switch adopts a novel coupled-line topology, in which MOSFETs are employed as a variable impedance component at the through- A nd coupled-ports to achieve a large isolation. Over the measured frequency band of 220-320 GHz, a minimum insertion loss of 3.9 dB (at 303 GHz) and a maximum isolation of 66 dB (at 250 GHz) were obtained. This achieved peak isolation is the largest value obtained so far beyond 100 GHz with a CMOS switch. An isolation larger than 39 dB was maintained for the entire frequency band measured. The measured return loss showed a maximum value of 29 dB at 312 GHz.

Original languageEnglish
Article number8638971
Pages (from-to)215-218
Number of pages4
JournalIEEE Transactions on Terahertz Science and Technology
Volume9
Issue number2
DOIs
Publication statusPublished - 2019 Mar

Keywords

  • CMOS technology
  • THz
  • coupled line
  • single-pole single-throw (SPST)
  • switches

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

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