A 325 GHz InP HBT differential-mode amplifier

J. B. Hacker; Y. M. Lee; H. J. Park; J. S. Rieh; M. Kim

doi:10.1109/LMWC.2011.2116152

A 325 GHz InP HBT differential-mode amplifier

J. B. Hacker, Y. M. Lee, H. J. Park, J. S. Rieh, M. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

Original language	English
Article number	5739124
Pages (from-to)	264-266
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	21
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2011.2116152
Publication status	Published - 2011 May

Keywords

InP HBT
monolithic microwave integrated circuit (MMIC)
terahertz amplifier

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/LMWC.2011.2116152

Cite this

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title = "A 325 GHz InP HBT differential-mode amplifier",

abstract = "An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.",

keywords = "InP HBT, monolithic microwave integrated circuit (MMIC), terahertz amplifier",

author = "Hacker, {J. B.} and Lee, {Y. M.} and Park, {H. J.} and Rieh, {J. S.} and M. Kim",

note = "Funding Information: Manuscript received October 21, 2010; revised December 27, 2010 and January 28, 2011; accepted February 11, 2011. Date of publication March 24, 2011; date of current version May 11, 2011. This work was supported by the IT R&D Program of MKE/KEIT [KI001855, Wireless Local Area Communication Systems on Tera Hertz Band].",

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doi = "10.1109/LMWC.2011.2116152",

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AU - Lee, Y. M.

AU - Park, H. J.

AU - Rieh, J. S.

AU - Kim, M.

N1 - Funding Information: Manuscript received October 21, 2010; revised December 27, 2010 and January 28, 2011; accepted February 11, 2011. Date of publication March 24, 2011; date of current version May 11, 2011. This work was supported by the IT R&D Program of MKE/KEIT [KI001855, Wireless Local Area Communication Systems on Tera Hertz Band].

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AB - An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

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A 325 GHz InP HBT differential-mode amplifier

Abstract

Keywords

ASJC Scopus subject areas

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