A 325 GHz InP HBT differential-mode amplifier

J. B. Hacker, Y. M. Lee, H. J. Park, Jae-Sung Rieh, Moonil Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

An MMIC amplifier operating at the highest reported frequency up to date for indium-phosphide double-heterojunction bipolar (DHBT) transistor technology is presented. The amplifier chain consists of seven unit-cell stages that contain differential-pair common-base HBTs and compact inverted microstrip matching networks. Amplifier operation in differential mode generates a virtual RF ground at a convenient location inside the unit cell. The measurements at 325 GHz show a small signal gain of 25 dB and a maximum output power of -1.5 dBm. An amplifier gain of greater than 20 dB is observed over 60 GHz bandwidth extending from 285 to 345 GHz.

Original languageEnglish
Article number5739124
Pages (from-to)264-266
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume21
Issue number5
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Heterojunction bipolar transistors
amplifiers
Indium phosphide
Monolithic microwave integrated circuits
Bandwidth
indium phosphides
bipolar transistors
cells
heterojunctions
bandwidth
output

Keywords

  • InP HBT
  • monolithic microwave integrated circuit (MMIC)
  • terahertz amplifier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

A 325 GHz InP HBT differential-mode amplifier. / Hacker, J. B.; Lee, Y. M.; Park, H. J.; Rieh, Jae-Sung; Kim, Moonil.

In: IEEE Microwave and Wireless Components Letters, Vol. 21, No. 5, 5739124, 01.05.2011, p. 264-266.

Research output: Contribution to journalArticle

Hacker, J. B. ; Lee, Y. M. ; Park, H. J. ; Rieh, Jae-Sung ; Kim, Moonil. / A 325 GHz InP HBT differential-mode amplifier. In: IEEE Microwave and Wireless Components Letters. 2011 ; Vol. 21, No. 5. pp. 264-266.
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