Abstract
A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.
| Original language | English |
|---|---|
| Title of host publication | 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2977-2980 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781538636466 |
| DOIs | |
| Publication status | Published - 2018 Oct 26 |
| Event | 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 - Honolulu, United States Duration: 2018 Jul 18 → 2018 Jul 21 |
Publication series
| Name | Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS |
|---|---|
| Volume | 2018-July |
| ISSN (Print) | 1557-170X |
Other
| Other | 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 18/7/18 → 18/7/21 |
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ASJC Scopus subject areas
- Signal Processing
- Biomedical Engineering
- Computer Vision and Pattern Recognition
- Health Informatics
Cite this
A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. / Zawawi, Ruhaifi Abdullah; Kim, Jae Kun; Park, Jong Bum; Kim, Seong-Woo; Manaf, Asrulnizam Abd; Kim, Jungsuk.
40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2977-2980 8513090 (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS; Vol. 2018-July).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems
AU - Zawawi, Ruhaifi Abdullah
AU - Kim, Jae Kun
AU - Park, Jong Bum
AU - Kim, Seong-Woo
AU - Manaf, Asrulnizam Abd
AU - Kim, Jungsuk
PY - 2018/10/26
Y1 - 2018/10/26
N2 - A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.
AB - A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.
UR - http://www.scopus.com/inward/record.url?scp=85056617257&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056617257&partnerID=8YFLogxK
U2 - 10.1109/EMBC.2018.8513090
DO - 10.1109/EMBC.2018.8513090
M3 - Conference contribution
C2 - 30441023
AN - SCOPUS:85056617257
T3 - Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
SP - 2977
EP - 2980
BT - 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -