A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

Ruhaifi Abdullah Zawawi, Jae Kun Kim, Jong Bum Park, Seong-Woo Kim, Asrulnizam Abd Manaf, Jungsuk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.

Original languageEnglish
Title of host publication40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2977-2980
Number of pages4
ISBN (Electronic)9781538636466
DOIs
Publication statusPublished - 2018 Oct 26
Event40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 - Honolulu, United States
Duration: 2018 Jul 182018 Jul 21

Publication series

NameProceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
Volume2018-July
ISSN (Print)1557-170X

Other

Other40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018
CountryUnited States
CityHonolulu
Period18/7/1818/7/21

Fingerprint

Visual Prosthesis
Electric Power Supplies
Telemetry
Telemetering
Energy gap
Temperature
Electric potential
Networks (circuits)
MOSFET devices
Prostheses and Implants

ASJC Scopus subject areas

  • Signal Processing
  • Biomedical Engineering
  • Computer Vision and Pattern Recognition
  • Health Informatics

Cite this

Zawawi, R. A., Kim, J. K., Park, J. B., Kim, S-W., Manaf, A. A., & Kim, J. (2018). A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. In 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018 (pp. 2977-2980). [8513090] (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS; Vol. 2018-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EMBC.2018.8513090

A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. / Zawawi, Ruhaifi Abdullah; Kim, Jae Kun; Park, Jong Bum; Kim, Seong-Woo; Manaf, Asrulnizam Abd; Kim, Jungsuk.

40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2977-2980 8513090 (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zawawi, RA, Kim, JK, Park, JB, Kim, S-W, Manaf, AA & Kim, J 2018, A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. in 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018., 8513090, Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS, vol. 2018-July, Institute of Electrical and Electronics Engineers Inc., pp. 2977-2980, 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018, Honolulu, United States, 18/7/18. https://doi.org/10.1109/EMBC.2018.8513090
Zawawi RA, Kim JK, Park JB, Kim S-W, Manaf AA, Kim J. A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. In 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2977-2980. 8513090. (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS). https://doi.org/10.1109/EMBC.2018.8513090
Zawawi, Ruhaifi Abdullah ; Kim, Jae Kun ; Park, Jong Bum ; Kim, Seong-Woo ; Manaf, Asrulnizam Abd ; Kim, Jungsuk. / A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems. 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2977-2980 (Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS).
@inproceedings{cbe0b38954694cad922c17e8cdfe6494,
title = "A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems",
abstract = "A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.",
author = "Zawawi, {Ruhaifi Abdullah} and Kim, {Jae Kun} and Park, {Jong Bum} and Seong-Woo Kim and Manaf, {Asrulnizam Abd} and Jungsuk Kim",
year = "2018",
month = "10",
day = "26",
doi = "10.1109/EMBC.2018.8513090",
language = "English",
series = "Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2977--2980",
booktitle = "40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018",

}

TY - GEN

T1 - A 3.3 V, 8.89 μa and 5.5 ppm/°C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

AU - Zawawi, Ruhaifi Abdullah

AU - Kim, Jae Kun

AU - Park, Jong Bum

AU - Kim, Seong-Woo

AU - Manaf, Asrulnizam Abd

AU - Kim, Jungsuk

PY - 2018/10/26

Y1 - 2018/10/26

N2 - A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.

AB - A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 μm CMOS standard process. Consequently, a 5.53 ppm/°C temperature coefficient is obtained in the -40∼+125 °C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3∼ 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 IJA at a 3.3 V supply voltage, and the active area is 112 μm× 60 μm.

UR - http://www.scopus.com/inward/record.url?scp=85056617257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056617257&partnerID=8YFLogxK

U2 - 10.1109/EMBC.2018.8513090

DO - 10.1109/EMBC.2018.8513090

M3 - Conference contribution

C2 - 30441023

AN - SCOPUS:85056617257

T3 - Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS

SP - 2977

EP - 2980

BT - 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -