A 350-GHz Fundamental-Mode Common-Base Cross-Coupled Oscillator in 130-nm InP HBT Technology

Heekang Son, Junghwan Yoo, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 350-GHz fundamental-mode oscillator with a common-base cross-coupled topology has been developed based on a 130-nm InP HBT technology. A fabricated oscillator with a typical performance showed an oscillation frequency of 344 GHz. The measured output power was 1.1 dBm with a DC power dissipation of 74.8 mW, leading to a DC-To-RF efficiency of 1.72 %. It was confirmed from the measurement that a base inductance of 4 pH (for a device size of 5-\mum emitter length) needs to be included for accurate prediction of the circuit performance, which would serve a useful guideline for circuit designs with the given process technology.

Original languageEnglish
Title of host publicationRFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40-41
Number of pages2
ISBN (Electronic)9781665466493
DOIs
Publication statusPublished - 2022
Event2022 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2022 - Busan, Korea, Republic of
Duration: 2022 Aug 292022 Aug 31

Publication series

NameRFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology

Conference

Conference2022 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2022
Country/TerritoryKorea, Republic of
CityBusan
Period22/8/2922/8/31

Keywords

  • Heterojunction bipolar transistors (HBTs)
  • oscillators
  • Terahertz (THz)

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

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