A terahertz frequency multiplier is fabricated using a 65-nm CMOS technology. A modified model for an n-type thin-oxide varactor is also created from measured S-parameter data sets around 300 and 600 GHz. The multiplier circuit produces −20.9 dB m of probe-measured output power at 595 GHz, and its performance is in a close agreement with the simulated data proving the accuracy of the modified varactor model.
- CMOS varactor
- frequency multiplier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering