A 600 GHz varactor frequency multiplier using 65-nm CMOS technology

S. H. Choi, C. Yi, Moonil Kim

Research output: Contribution to journalArticle

Abstract

A terahertz frequency multiplier is fabricated using a 65-nm CMOS technology. A modified model for an n-type thin-oxide varactor is also created from measured S-parameter data sets around 300 and 600 GHz. The multiplier circuit produces −20.9 dB m of probe-measured output power at 595 GHz, and its performance is in a close agreement with the simulated data proving the accuracy of the modified varactor model.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume60
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

frequency multipliers
Frequency multiplying circuits
varactor diodes
Varactors
CMOS
multipliers
Scattering parameters
Oxides
oxides
Networks (circuits)
probes
output

Keywords

  • CMOS varactor
  • frequency multiplier
  • terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A 600 GHz varactor frequency multiplier using 65-nm CMOS technology. / Choi, S. H.; Yi, C.; Kim, Moonil.

In: Microwave and Optical Technology Letters, Vol. 60, No. 1, 01.01.2018, p. 114-117.

Research output: Contribution to journalArticle

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