Abstract
A terahertz frequency multiplier is fabricated using a 65-nm CMOS technology. A modified model for an n-type thin-oxide varactor is also created from measured S-parameter data sets around 300 and 600 GHz. The multiplier circuit produces −20.9 dB m of probe-measured output power at 595 GHz, and its performance is in a close agreement with the simulated data proving the accuracy of the modified varactor model.
Original language | English |
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Pages (from-to) | 114-117 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 60 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2018 Jan |
Keywords
- CMOS varactor
- frequency multiplier
- terahertz
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering