A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

Jae Hong Kwon, Jung Hoon Seo, Sang Il Shin, Kyung Hwan Kim, Dong Hoon Choi, In Byeong Kang, Hochul Kang, Byeong Kwon Ju

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

Original languageEnglish
Pages (from-to)500-505
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume55
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

Keywords

  • 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene)
  • Organic electronics
  • Organic thin-film transistor (OTFT)
  • Spin-on glass

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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