A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

Jae Hong Kwon, Jung Hoon Seo, Sang Il Shin, Kyung Hwan Kim, Dong Hoon Choi, In Byeong Kang, Hochul Kang, Byeong Kwon Ju

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

Original languageEnglish
Pages (from-to)500-505
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume55
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

Semiconducting organic compounds
Gate dielectrics
organic semiconductors
Thin film transistors
transistors
thin films
Siloxanes
Glass
glass
Carrier mobility
siloxanes
carrier mobility
Charge carriers
Threshold voltage
threshold voltage
electrical measurement
charge carriers
Fabrication
fabrication
Processing

Keywords

  • 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene)
  • Organic electronics
  • Organic thin-film transistor (OTFT)
  • Spin-on glass

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric. / Kwon, Jae Hong; Seo, Jung Hoon; Shin, Sang Il; Kim, Kyung Hwan; Choi, Dong Hoon; Kang, In Byeong; Kang, Hochul; Ju, Byeong Kwon.

In: IEEE Transactions on Electron Devices, Vol. 55, No. 2, 01.02.2008, p. 500-505.

Research output: Contribution to journalArticle

Kwon, Jae Hong ; Seo, Jung Hoon ; Shin, Sang Il ; Kim, Kyung Hwan ; Choi, Dong Hoon ; Kang, In Byeong ; Kang, Hochul ; Ju, Byeong Kwon. / A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric. In: IEEE Transactions on Electron Devices. 2008 ; Vol. 55, No. 2. pp. 500-505.
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