A 8-Gb/s/pin current mode multi-level simultaneous bidirectional I/O

Yong Sin Kim, Sung Mo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes a high speed current mode multi-level simultaneous bi-directional I/O. To increase data rate, impedance matching, reference calibration, latched differential current switching and clocked comparators are used. Simulation results based on 0.18μm CMOS process show that the proposed design achieves data rate up to 8-Gb/s/pin at the power consumption of 46.8mW with 1.8V power supply.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Pages3069-3072
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 19
Externally publishedYes
Event2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
Duration: 2008 May 182008 May 21

Other

Other2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
CountryUnited States
CitySeattle, WA
Period08/5/1808/5/21

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, Y. S., & Kang, S. M. (2008). A 8-Gb/s/pin current mode multi-level simultaneous bidirectional I/O. In Proceedings - IEEE International Symposium on Circuits and Systems (pp. 3069-3072). [4542106] https://doi.org/10.1109/ISCAS.2008.4542106