A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback

Hyogi Seo, Seungwoo Seo, Jongwon Yun, Jae-Sung Rieh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.

Original languageEnglish
Pages (from-to)190-197
Number of pages8
JournalJournal of Semiconductor Technology and Science
Volume11
Issue number3
Publication statusPublished - 2011 Sep 1

Fingerprint

Feedback
Buffers
Networks (circuits)
Electric potential

Keywords

  • Frequency divider
  • Inductive feedback
  • Injection locked frequency divider
  • LC oscillator
  • RF CMOS
  • THz

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback. / Seo, Hyogi; Seo, Seungwoo; Yun, Jongwon; Rieh, Jae-Sung.

In: Journal of Semiconductor Technology and Science, Vol. 11, No. 3, 01.09.2011, p. 190-197.

Research output: Contribution to journalArticle

@article{9710d8f43d4c41d883b7a60a9be6d8ea,
title = "A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback",
abstract = "This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.",
keywords = "Frequency divider, Inductive feedback, Injection locked frequency divider, LC oscillator, RF CMOS, THz",
author = "Hyogi Seo and Seungwoo Seo and Jongwon Yun and Jae-Sung Rieh",
year = "2011",
month = "9",
day = "1",
language = "English",
volume = "11",
pages = "190--197",
journal = "Journal of Semiconductor Technology and Science",
issn = "1598-1657",
publisher = "Institute of Electronics Engineers of Korea",
number = "3",

}

TY - JOUR

T1 - A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback

AU - Seo, Hyogi

AU - Seo, Seungwoo

AU - Yun, Jongwon

AU - Rieh, Jae-Sung

PY - 2011/9/1

Y1 - 2011/9/1

N2 - This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.

AB - This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.

KW - Frequency divider

KW - Inductive feedback

KW - Injection locked frequency divider

KW - LC oscillator

KW - RF CMOS

KW - THz

UR - http://www.scopus.com/inward/record.url?scp=83055163388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83055163388&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:83055163388

VL - 11

SP - 190

EP - 197

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

SN - 1598-1657

IS - 3

ER -