Abstract
This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.
| Original language | English |
|---|---|
| Pages (from-to) | 190-197 |
| Number of pages | 8 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 11 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 Sep |
Keywords
- Frequency divider
- Inductive feedback
- Injection locked frequency divider
- LC oscillator
- RF CMOS
- THz
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Seo, H., Seo, S., Yun, J., & Rieh, J. S. (2011). A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback. Journal of Semiconductor Technology and Science, 11(3), 190-197. https://doi.org/10.5573/JSTS.2011.11.3.190