Abstract
This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.
| Original language | English |
|---|---|
| Pages (from-to) | 190-197 |
| Number of pages | 8 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 11 |
| Issue number | 3 |
| Publication status | Published - 2011 Sep 1 |
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Keywords
- Frequency divider
- Inductive feedback
- Injection locked frequency divider
- LC oscillator
- RF CMOS
- THz
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback. / Seo, Hyogi; Seo, Seungwoo; Yun, Jongwon; Rieh, Jae-Sung.
In: Journal of Semiconductor Technology and Science, Vol. 11, No. 3, 01.09.2011, p. 190-197.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A 90-nm CMOS 144 GHz injection locked frequency divider with inductive feedback
AU - Seo, Hyogi
AU - Seo, Seungwoo
AU - Yun, Jongwon
AU - Rieh, Jae-Sung
PY - 2011/9/1
Y1 - 2011/9/1
N2 - This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.
AB - This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90- nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm × 0.69 mm including the DC and RF pads.
KW - Frequency divider
KW - Inductive feedback
KW - Injection locked frequency divider
KW - LC oscillator
KW - RF CMOS
KW - THz
UR - http://www.scopus.com/inward/record.url?scp=83055163388&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=83055163388&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:83055163388
VL - 11
SP - 190
EP - 197
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
SN - 1598-1657
IS - 3
ER -