A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

James Jungho Pak; Abul E. Kabir; Gerold W. Neudeck; James H. Logsdon

doi:10.1016/S0924-4247(96)01319-2

A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

James Jungho Pak, Abul E. Kabir, Gerold W. Neudeck, James H. Logsdon

School of Electrical Engineering

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO ₂ stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min ^-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V ^-1 g ^-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

Original language	English
Pages (from-to)	267-271
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	56
Issue number	3
DOIs	https://doi.org/10.1016/S0924-4247(96)01319-2
Publication status	Published - 1996 Sep 1

Keywords

Merged epitaxial lateral overgrowth
Piezoresistive accelerometers
Silicon beams

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering
Instrumentation

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Pak, J. J., Kabir, A. E., Neudeck, G. W., & Logsdon, J. H. (1996). A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation. Sensors and Actuators, A: Physical, 56(3), 267-271. https://doi.org/10.1016/S0924-4247(96)01319-2

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