Abstract
Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.
| Original language | English |
|---|---|
| Pages (from-to) | 267-271 |
| Number of pages | 5 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 56 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1996 Sep |
Keywords
- Merged epitaxial lateral overgrowth
- Piezoresistive accelerometers
- Silicon beams
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
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Cite this
Pak, J. J., Kabir, A. E., Neudeck, G. W., & Logsdon, J. H. (1996). A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation. Sensors and Actuators, A: Physical, 56(3), 267-271. https://doi.org/10.1016/S0924-4247(96)01319-2