Abstract
Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.
| Original language | English |
|---|---|
| Pages (from-to) | 267-271 |
| Number of pages | 5 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 56 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1996 Sep 1 |
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Keywords
- Merged epitaxial lateral overgrowth
- Piezoresistive accelerometers
- Silicon beams
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
- Instrumentation
Cite this
A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation. / Pak, James Jungho; Kabir, Abul E.; Neudeck, Gerold W.; Logsdon, James H.
In: Sensors and Actuators, A: Physical, Vol. 56, No. 3, 01.09.1996, p. 267-271.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation
AU - Pak, James Jungho
AU - Kabir, Abul E.
AU - Neudeck, Gerold W.
AU - Logsdon, James H.
PY - 1996/9/1
Y1 - 1996/9/1
N2 - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.
AB - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.
KW - Merged epitaxial lateral overgrowth
KW - Piezoresistive accelerometers
KW - Silicon beams
UR - http://www.scopus.com/inward/record.url?scp=0030233870&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030233870&partnerID=8YFLogxK
U2 - 10.1016/S0924-4247(96)01319-2
DO - 10.1016/S0924-4247(96)01319-2
M3 - Article
VL - 56
SP - 267
EP - 271
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 3
ER -