A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

James Jungho Pak, Abul E. Kabir, Gerold W. Neudeck, James H. Logsdon

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

Original languageEnglish
Pages (from-to)267-271
Number of pages5
JournalSensors and Actuators, A: Physical
Volume56
Issue number3
DOIs
Publication statusPublished - 1996 Sep 1

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Silicon
accelerometers
Accelerometers
silicon
Single crystals
Thickness control
membranes
Membranes
single crystals
nonlinearity
sensitivity

Keywords

  • Merged epitaxial lateral overgrowth
  • Piezoresistive accelerometers
  • Silicon beams

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation. / Pak, James Jungho; Kabir, Abul E.; Neudeck, Gerold W.; Logsdon, James H.

In: Sensors and Actuators, A: Physical, Vol. 56, No. 3, 01.09.1996, p. 267-271.

Research output: Contribution to journalArticle

@article{c04a4737b6bd43d399b4d66f2fde25e3,
title = "A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation",
abstract = "Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4{\%} up to 30g of acceleration.",
keywords = "Merged epitaxial lateral overgrowth, Piezoresistive accelerometers, Silicon beams",
author = "Pak, {James Jungho} and Kabir, {Abul E.} and Neudeck, {Gerold W.} and Logsdon, {James H.}",
year = "1996",
month = "9",
day = "1",
doi = "10.1016/S0924-4247(96)01319-2",
language = "English",
volume = "56",
pages = "267--271",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

AU - Pak, James Jungho

AU - Kabir, Abul E.

AU - Neudeck, Gerold W.

AU - Logsdon, James H.

PY - 1996/9/1

Y1 - 1996/9/1

N2 - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

AB - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO 2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min -1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V -1 g -1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

KW - Merged epitaxial lateral overgrowth

KW - Piezoresistive accelerometers

KW - Silicon beams

UR - http://www.scopus.com/inward/record.url?scp=0030233870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030233870&partnerID=8YFLogxK

U2 - 10.1016/S0924-4247(96)01319-2

DO - 10.1016/S0924-4247(96)01319-2

M3 - Article

VL - 56

SP - 267

EP - 271

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 3

ER -