A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

James J. Pak; Abul E. Kabir; Gerold W. Neudeck; James H. Logsdon

doi:10.1016/S0924-4247(96)01319-2

A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

James J. Pak, Abul E. Kabir, Gerold W. Neudeck, James H. Logsdon

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO₂ stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min^-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V^-1 g^-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

Original language	English
Pages (from-to)	267-271
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	56
Issue number	3
DOIs	https://doi.org/10.1016/S0924-4247(96)01319-2
Publication status	Published - 1996 Sep

Keywords

Merged epitaxial lateral overgrowth
Piezoresistive accelerometers
Silicon beams

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/S0924-4247(96)01319-2

Cite this

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title = "A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation",

abstract = "Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.",

keywords = "Merged epitaxial lateral overgrowth, Piezoresistive accelerometers, Silicon beams",

author = "Pak, {James J.} and Kabir, {Abul E.} and Neudeck, {Gerold W.} and Logsdon, {James H.}",

note = "Funding Information: The authorsa reg ratefutlo Dave DeRoo and SteveS miler at Delco Electronicsfo r their help in accelerometdeer sign and to Jean Tolen for his help in measurintgh eaccelerome-ters. This work was supportedb y Delco Electronics, Kokomo,I N, and SRC 94-SJ-108.",

year = "1996",

month = sep,

doi = "10.1016/S0924-4247(96)01319-2",

language = "English",

volume = "56",

pages = "267--271",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier",

number = "3",

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T1 - A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

AU - Pak, James J.

AU - Kabir, Abul E.

AU - Neudeck, Gerold W.

AU - Logsdon, James H.

N1 - Funding Information: The authorsa reg ratefutlo Dave DeRoo and SteveS miler at Delco Electronicsfo r their help in accelerometdeer sign and to Jean Tolen for his help in measurintgh eaccelerome-ters. This work was supportedb y Delco Electronics, Kokomo,I N, and SRC 94-SJ-108.

PY - 1996/9

Y1 - 1996/9

N2 - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

AB - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

KW - Merged epitaxial lateral overgrowth

KW - Piezoresistive accelerometers

KW - Silicon beams

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U2 - 10.1016/S0924-4247(96)01319-2

DO - 10.1016/S0924-4247(96)01319-2

M3 - Article

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VL - 56

SP - 267

EP - 271

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 3

ER -

A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

Abstract

Keywords

ASJC Scopus subject areas

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