A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation

James J. Pak, Abul E. Kabir, Gerold W. Neudeck, James H. Logsdon

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.

Original languageEnglish
Pages (from-to)267-271
Number of pages5
JournalSensors and Actuators, A: Physical
Volume56
Issue number3
DOIs
Publication statusPublished - 1996 Sep

Keywords

  • Merged epitaxial lateral overgrowth
  • Piezoresistive accelerometers
  • Silicon beams

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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