TY - JOUR
T1 - A bridge-type piezoresistive accelerometer using merged epitaxial lateral overgrowth for thin silicon beam formation
AU - Pak, James J.
AU - Kabir, Abul E.
AU - Neudeck, Gerold W.
AU - Logsdon, James H.
N1 - Funding Information:
The authorsa reg ratefutlo Dave DeRoo and SteveS miler at Delco Electronicsfo r their help in accelerometdeer sign and to Jean Tolen for his help in measurintgh eaccelerome-ters. This work was supportedb y Delco Electronics, Kokomo,I N, and SRC 94-SJ-108.
PY - 1996/9
Y1 - 1996/9
N2 - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.
AB - Merged epitaxial lateral overgrowth (MELO) of silicon has been used to form 10 μm ± 0.5 pm thick, 420 μm long, and 170 μm wide single-crystal silicon beams for a four-bridge piezoresistive accelerometer. Buried SiO2 stripes are used to produce the near-perfect backside etch-stop for the silicon membrane, while the topside thickness control is established by the growth rate of 0.1 μm min-1. The MELO membrane technique produces an accelerometer that has low-doped high-quality single-crystal silicon beams. The measured sensitivity is 287 μV V-1 g-1, which is about twice that for a similar device, and the non-linearity is less than 4% up to 30g of acceleration.
KW - Merged epitaxial lateral overgrowth
KW - Piezoresistive accelerometers
KW - Silicon beams
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U2 - 10.1016/S0924-4247(96)01319-2
DO - 10.1016/S0924-4247(96)01319-2
M3 - Article
AN - SCOPUS:0030233870
VL - 56
SP - 267
EP - 271
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 3
ER -