A broadband silicon electro-absorption modulator (EAM) using a Schottky diode

Uiseok Jeong, Dongchul Han, Dong Ho Lee, Kyungwoon Lee, J. Kim, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A silicon optical modulator operating at high speed and low voltage is proposed by using a Schottky diode. The optical modulation is achieved by the intensity change of guiding light due to free-carrier absorption, not conventional interference effects. The rib waveguide structure of the modulator has a height of 340 nm, a etch depth of 150 nm, a width of 4.8 μm, and a modulation length of 500 μm. It was designed to maximize the free carrier injection by a Schottky contact on the rib waveguide center. The center of the rib waveguide is lightly doped with phosphorus of 1016 cm -3, and the sides are heavily doped with phosphorus of 10 20 cm-3 to improve modulation depth by injecting free carriers into the center of the rib waveguide. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve high speed operation, travelling-wave type electrodes were designed to allow co-propagation of electrical and optical signals along the waveguide. The device simulated results demonstrate a 3.3 dB modulation depth for a 500 μm modulation length with 3 Vpp driving voltages. We demonstrated a Schottky modulator operating Si EAM at 3 Vpp with a 3 dB bandwidth of 7 GHz.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume8988
ISBN (Print)9780819499011
DOIs
Publication statusPublished - 2014 Jan 1
EventIntegrated Optics: Devices, Materials, and Technologies XVIII - San Francisco, CA, United States
Duration: 2014 Feb 32014 Feb 5

Other

OtherIntegrated Optics: Devices, Materials, and Technologies XVIII
CountryUnited States
CitySan Francisco, CA
Period14/2/314/2/5

Fingerprint

Silicon
Modulator
Schottky diodes
Diode
Broadband
Modulators
Waveguide
modulators
Diodes
Waveguides
Absorption
broadband
waveguides
Modulation
silicon
modulation
Phosphorus
phosphorus
High Speed
high speed

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Jeong, U., Han, D., Lee, D. H., Lee, K., Kim, J., & Park, J. H. (2014). A broadband silicon electro-absorption modulator (EAM) using a Schottky diode. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8988). [89881M] SPIE. https://doi.org/10.1117/12.2038800

A broadband silicon electro-absorption modulator (EAM) using a Schottky diode. / Jeong, Uiseok; Han, Dongchul; Lee, Dong Ho; Lee, Kyungwoon; Kim, J.; Park, Jung ho.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8988 SPIE, 2014. 89881M.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jeong, U, Han, D, Lee, DH, Lee, K, Kim, J & Park, JH 2014, A broadband silicon electro-absorption modulator (EAM) using a Schottky diode. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8988, 89881M, SPIE, Integrated Optics: Devices, Materials, and Technologies XVIII, San Francisco, CA, United States, 14/2/3. https://doi.org/10.1117/12.2038800
Jeong U, Han D, Lee DH, Lee K, Kim J, Park JH. A broadband silicon electro-absorption modulator (EAM) using a Schottky diode. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8988. SPIE. 2014. 89881M https://doi.org/10.1117/12.2038800
Jeong, Uiseok ; Han, Dongchul ; Lee, Dong Ho ; Lee, Kyungwoon ; Kim, J. ; Park, Jung ho. / A broadband silicon electro-absorption modulator (EAM) using a Schottky diode. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8988 SPIE, 2014.
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