A CMOS 180-GHz signal source with an integrated frequency doubler

Jungsoo Kim, Myeong Gyo Seo, Jae-Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from -15.3 to -10.8 dBm. The peak output power was -10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was -71 dBc/Hz at 1 MHz offset.

Original languageEnglish
Pages (from-to)229-231
Number of pages3
JournalJournal of Electromagnetic Engineering and Science
Volume16
Issue number4
DOIs
Publication statusPublished - 2016

Fingerprint

Frequency doublers
Phase noise
CMOS
Electric power utilization
oscillators
output
direct current

Keywords

  • CMOS
  • Colpitts
  • Frequency doubler
  • Oscillator
  • Signal source

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation
  • Radiation

Cite this

A CMOS 180-GHz signal source with an integrated frequency doubler. / Kim, Jungsoo; Seo, Myeong Gyo; Rieh, Jae-Sung.

In: Journal of Electromagnetic Engineering and Science, Vol. 16, No. 4, 2016, p. 229-231.

Research output: Contribution to journalArticle

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