A CMOS magnetic hall sensor using a switched biasing amplifier

Young Jae Min, Chan Keun Kwon, Hoon Ki Kim, Chulwoo Kim, Soo-Won Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A compact CMOS magnetic Hall sensor that includes both a Hall plate and readout circuit is proposed. In order to achieve a low-noise and low-power operation, the sensor employs a switched biasing amplifier with a chopper. The prototype has been implemented and fabricated in a high-voltage 0.18 μm CMOS process and occupies 0.624 mm 2. Owing to the switched biasing amplifier, the input-referred noise is reduced from 41 μT √Hz to 25 μT √Hz. The entire sensor consumes 4.5 mW with a 3.3 V supply voltage.

Original languageEnglish
Article number6026216
Pages (from-to)1195-1196
Number of pages2
JournalIEEE Sensors Journal
Volume12
Issue number5
DOIs
Publication statusPublished - 2012 Apr 26

Fingerprint

CMOS
amplifiers
sensors
Sensors
electric choppers
Electric potential
low noise
readout
high voltages
prototypes
Networks (circuits)
electric potential

Keywords

  • 1/f noise
  • CMOS
  • dynamic offset cancellation
  • magnetic Hall sensor
  • switched biasing amplifier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

A CMOS magnetic hall sensor using a switched biasing amplifier. / Min, Young Jae; Kwon, Chan Keun; Kim, Hoon Ki; Kim, Chulwoo; Kim, Soo-Won.

In: IEEE Sensors Journal, Vol. 12, No. 5, 6026216, 26.04.2012, p. 1195-1196.

Research output: Contribution to journalArticle

Min, Young Jae ; Kwon, Chan Keun ; Kim, Hoon Ki ; Kim, Chulwoo ; Kim, Soo-Won. / A CMOS magnetic hall sensor using a switched biasing amplifier. In: IEEE Sensors Journal. 2012 ; Vol. 12, No. 5. pp. 1195-1196.
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