A CMOS magnetic hall sensor using a switched biasing amplifier

Young Jae Min, Chan Keun Kwon, Hoon Ki Kim, Chulwoo Kim, Soo Won Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A compact CMOS magnetic Hall sensor that includes both a Hall plate and readout circuit is proposed. In order to achieve a low-noise and low-power operation, the sensor employs a switched biasing amplifier with a chopper. The prototype has been implemented and fabricated in a high-voltage 0.18 μm CMOS process and occupies 0.624 mm 2. Owing to the switched biasing amplifier, the input-referred noise is reduced from 41 μT √Hz to 25 μT √Hz. The entire sensor consumes 4.5 mW with a 3.3 V supply voltage.

Original languageEnglish
Article number6026216
Pages (from-to)1195-1196
Number of pages2
JournalIEEE Sensors Journal
Volume12
Issue number5
DOIs
Publication statusPublished - 2012

Keywords

  • 1/f noise
  • CMOS
  • dynamic offset cancellation
  • magnetic Hall sensor
  • switched biasing amplifier

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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  • Cite this

    Min, Y. J., Kwon, C. K., Kim, H. K., Kim, C., & Kim, S. W. (2012). A CMOS magnetic hall sensor using a switched biasing amplifier. IEEE Sensors Journal, 12(5), 1195-1196. [6026216]. https://doi.org/10.1109/JSEN.2011.2169055