A CMOS-process-compatible ZnO-based charge-trap flash memory

Yujeong Seo, Min Yeong Song, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (106 P/E cycles), along with comparable retention properties.

Original languageEnglish
Article number6410336
Pages (from-to)238-240
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - 2013 Jan 18

Fingerprint

Flash memory
Silicon oxides
Nitrides
Perovskite
Oxides
Durability
Metals
Data storage equipment
Electric potential

Keywords

  • Charge-trap Flash (CTF)
  • ReCTF
  • resistive random-access memory (ReRAM)
  • silicon/oxide/nitride/oxide/silicon (SONOS)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A CMOS-process-compatible ZnO-based charge-trap flash memory. / Seo, Yujeong; Song, Min Yeong; An, Ho Myoung; Kim, Tae Geun.

In: IEEE Electron Device Letters, Vol. 34, No. 2, 6410336, 18.01.2013, p. 238-240.

Research output: Contribution to journalArticle

Seo, Yujeong ; Song, Min Yeong ; An, Ho Myoung ; Kim, Tae Geun. / A CMOS-process-compatible ZnO-based charge-trap flash memory. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 2. pp. 238-240.
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