A CMOS-process-compatible ZnO-based charge-trap flash memory

Yujeong Seo; Min Yeong Song; Ho Myoung An; Tae Geun Kim

doi:10.1109/LED.2012.2235059

A CMOS-process-compatible ZnO-based charge-trap flash memory

Yujeong Seo, Min Yeong Song, Ho Myoung An, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (10⁶ P/E cycles), along with comparable retention properties.

Original language	English
Article number	6410336
Pages (from-to)	238-240
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2235059
Publication status	Published - 2013

Keywords

Charge-trap Flash (CTF)
ReCTF
resistive random-access memory (ReRAM)
silicon/oxide/nitride/oxide/silicon (SONOS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2235059

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abstract = "ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (106 P/E cycles), along with comparable retention properties.",

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AU - An, Ho Myoung

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AB - ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (106 P/E cycles), along with comparable retention properties.

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A CMOS-process-compatible ZnO-based charge-trap flash memory

Abstract

Keywords

ASJC Scopus subject areas

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