A CMOS-process-compatible ZnO-based charge-trap flash memory

Yujeong Seo, Min Yeong Song, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (106 P/E cycles), along with comparable retention properties.

Original languageEnglish
Article number6410336
Pages (from-to)238-240
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - 2013

Keywords

  • Charge-trap Flash (CTF)
  • ReCTF
  • resistive random-access memory (ReRAM)
  • silicon/oxide/nitride/oxide/silicon (SONOS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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