ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (106 P/E cycles), along with comparable retention properties.
- Charge-trap Flash (CTF)
- resistive random-access memory (ReRAM)
- silicon/oxide/nitride/oxide/silicon (SONOS)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials