Abstract
This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. TheW-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS-varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutralization tolerant of capacitance change caused by process-voltage-temperature (PVT) variation or transistor model inaccuracy, which commonly occurs at mm-wave frequencies. The proposed tunable neutralization is experimentally confirmed by measuring gain and stability of theW-band amplifier fabricated in a 65-nm CMOS process. The amplifier achieves a measured gain of 17.5 dB at 79 GHz and a 3-dB bandwidth from 77.5 to 84 GHz without any stability issue. The DC power consumption is 56.7 mW and the chip area is 0.85 mm2.
Original language | English |
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Article number | 537 |
Journal | Electronics (Switzerland) |
Volume | 8 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2019 May |
Keywords
- CMOS W-band amplifier
- MOS-varactor
- Transformer-based impedance matching
- Tunable neutralization
ASJC Scopus subject areas
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering