A CMOS W-band amplifier with tunable neutralization using a cross-coupled MOS-varactor pair

Byungho Yook, Kwangwon Park, Seungwon Park, Hyunkyu Lee, Taehoon Kim, Jong Sung Park, Sanggeun Jeon

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. TheW-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS-varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutralization tolerant of capacitance change caused by process-voltage-temperature (PVT) variation or transistor model inaccuracy, which commonly occurs at mm-wave frequencies. The proposed tunable neutralization is experimentally confirmed by measuring gain and stability of theW-band amplifier fabricated in a 65-nm CMOS process. The amplifier achieves a measured gain of 17.5 dB at 79 GHz and a 3-dB bandwidth from 77.5 to 84 GHz without any stability issue. The DC power consumption is 56.7 mW and the chip area is 0.85 mm2.

Original languageEnglish
Article number537
JournalElectronics (Switzerland)
Volume8
Issue number5
DOIs
Publication statusPublished - 2019 May

Keywords

  • CMOS W-band amplifier
  • MOS-varactor
  • Transformer-based impedance matching
  • Tunable neutralization

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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