This letter presents a WR-3.4-band reflection-type phase shifter (RTPS) in a 250-nm InP double heterojunction bipolar transistor (DHBT) technology. A reflective load with an L-section network is implemented using a diode-connected transistor, a transmission line, and a shunt capacitor. The reference impedance of the reflective load is set to a low impedance of 30 Ω , thus leading to a low-loss variation over a wide operating bandwidth. To minimize the chip area, a quadrature hybrid for combining reflected signals is implemented using a compact broadside coupled-line coupler. The measurement shows that the RTPS provides a continuous 180° phase shift with an average insertion loss of 9.9-10.9 dB over a frequency range from 275 to 320 GHz. The loss variation is only 1 dB. The root-mean-squared (RMS) amplitude and phase errors maintain below 2.9 dB and 7.3°, respectively. The chip size including all probing pads is as small as 0.37 x 0.46 mm², and the core size is only 0.02 mm². The dc power consumption is zero.
- InP double heterojunction bipolar transistor (DHBT)
- Phase shifters
- phased array
- reflection-type phase shifter (RTPS)
- Semiconductor device measurement
- Transmission line measurements
- Wireless communication
- WR-3.4 band.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering