A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

Se Jin Park, Yunae Cho, Sung Hwan Moon, Ji Eun Kim, Doh Kwon Lee, Jihye Gwak, Ji Hyun Kim, Dong Wook Kim, Byoung Koun Min

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(InxGa1-x)S2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(InxGa1-x)(S1-ySey)2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm -2. The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films.

Original languageEnglish
Article number135105
JournalJournal of Physics D: Applied Physics
Volume47
Issue number13
DOIs
Publication statusPublished - 2014 Apr 2

Fingerprint

Solar cells
Energy gap
solar cells
Open circuit voltage
thin films
Energy conversion
Short circuit currents
Conversion efficiency
Surface morphology
Electric properties
Current density
energy conversion efficiency
Heat treatment
Irradiation
short circuit currents
electrical impedance
open circuit voltage
Thin films
Coatings
Oxidation

Keywords

  • chalcopyrite
  • solar cell
  • solution-process

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells. / Park, Se Jin; Cho, Yunae; Moon, Sung Hwan; Kim, Ji Eun; Lee, Doh Kwon; Gwak, Jihye; Kim, Ji Hyun; Kim, Dong Wook; Min, Byoung Koun.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 13, 135105, 02.04.2014.

Research output: Contribution to journalArticle

Park, Se Jin ; Cho, Yunae ; Moon, Sung Hwan ; Kim, Ji Eun ; Lee, Doh Kwon ; Gwak, Jihye ; Kim, Ji Hyun ; Kim, Dong Wook ; Min, Byoung Koun. / A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells. In: Journal of Physics D: Applied Physics. 2014 ; Vol. 47, No. 13.
@article{7969308ce3514ec4896d374bf62c9cbe,
title = "A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells",
abstract = "Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(InxGa1-x)S2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(InxGa1-x)(S1-ySey)2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm -2. The energy conversion efficiencies were 8.28{\%} for CIGS and 8.81{\%} for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films.",
keywords = "chalcopyrite, solar cell, solution-process",
author = "Park, {Se Jin} and Yunae Cho and Moon, {Sung Hwan} and Kim, {Ji Eun} and Lee, {Doh Kwon} and Jihye Gwak and Kim, {Ji Hyun} and Kim, {Dong Wook} and Min, {Byoung Koun}",
year = "2014",
month = "4",
day = "2",
doi = "10.1088/0022-3727/47/13/135105",
language = "English",
volume = "47",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "13",

}

TY - JOUR

T1 - A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

AU - Park, Se Jin

AU - Cho, Yunae

AU - Moon, Sung Hwan

AU - Kim, Ji Eun

AU - Lee, Doh Kwon

AU - Gwak, Jihye

AU - Kim, Ji Hyun

AU - Kim, Dong Wook

AU - Min, Byoung Koun

PY - 2014/4/2

Y1 - 2014/4/2

N2 - Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(InxGa1-x)S2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(InxGa1-x)(S1-ySey)2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm -2. The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films.

AB - Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(InxGa1-x)S2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(InxGa1-x)(S1-ySey)2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm -2. The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films.

KW - chalcopyrite

KW - solar cell

KW - solution-process

UR - http://www.scopus.com/inward/record.url?scp=84896934004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896934004&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/47/13/135105

DO - 10.1088/0022-3727/47/13/135105

M3 - Article

AN - SCOPUS:84896934004

VL - 47

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 13

M1 - 135105

ER -