A comparison study on multilayered barrier oxide structure in charge trap flash for synaptic operation

Minkyung Kim, Eunpyo Park, In Soo Kim, Jongkil Park, Jaewook Kim, Yeonjoo Jeong, Suyoun Lee, Inho Kim, Jong Keuk Park, Tae Yeon Seong, Joon Young Kwak

Research output: Contribution to journalArticlepeer-review

Abstract

A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2 ) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.

Original languageEnglish
Article number70
Pages (from-to)1-7
Number of pages7
JournalCrystals
Volume11
Issue number1
DOIs
Publication statusPublished - 2021 Jan

Keywords

  • Charge trap flash
  • MoS
  • Multilayered oxide film
  • Neuromorphic
  • Synaptic device

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Inorganic Chemistry

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