A comprehensive study of high-Q island-gate varactors (IGVs) for CMOS millimeter-wave applications

Yongho Oh, Jae-Sung Rieh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This paper presents a comprehensive study on the high-Q island-gate varactor (IGV), which includes a comparison with the conventional multifinger varactors (MFVs) and analyses on the effect of structural variations on the varactor performance. The study shows that the IGV exhibits smaller R s and larger Q factor compared to the MFV, while its capacitance tuning ratio is smaller. The effect of the dimension variation and shape of the gate island, as well as the gate thickness, is substantial and the observed trends can be exploited for IGV optimization. This work indicates that the IGV is a highly promising option for millimeter-wave applications.

Original languageEnglish
Article number5739134
Pages (from-to)1520-1528
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume59
Issue number6
DOIs
Publication statusPublished - 2011 Jun 1

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varactor diodes
Varactors
Millimeter waves
millimeter waves
Q factors
CMOS
Capacitance
Tuning
capacitance
tuning
trends
optimization

Keywords

  • Millimeter wave
  • Q factor
  • varactors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Cite this

A comprehensive study of high-Q island-gate varactors (IGVs) for CMOS millimeter-wave applications. / Oh, Yongho; Rieh, Jae-Sung.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 6, 5739134, 01.06.2011, p. 1520-1528.

Research output: Contribution to journalArticle

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