A comprehensive study on the effect of tin top and bottom electrodes on atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

Si Joon Kim; Jaidah Mohan; Harrison Sejoon Kim; Su Min Hwang; Namhun Kim; Yong Chan Jung; Akshay Sahota; Kihyun Kim; Hyun Yong Yu; Pil Ryung Cha; Chadwin D. Young; Rino Choi; Jinho Ahn; Jiyoung Kim

doi:10.3390/ma13132968

A comprehensive study on the effect of tin top and bottom electrodes on atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films

Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Su Min Hwang, Namhun Kim, Yong Chan Jung, Akshay Sahota, Kihyun Kim, Hyun Yong Yu, Pil Ryung Cha, Chadwin D. Young, Rino Choi, Jinho Ahn, Jiyoung Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

Abstract

The discovery of ferroelectricity in HfO₂-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf_0.5Zr_0.5O₂ (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal budget process. Based on experiment demonstrations over the past 10 years, it is well known that HZO films show excellent ferroelectricity when sandwiched between TiN top and bottom electrodes. This work reports a comprehensive study on the effect of TiN top and bottom electrodes on the ferroelectric properties of HZO thin films (10 nm). Investigations showed that during HZO crystallization, the TiN bottom electrode promoted ferroelectric phase formation (by oxygen scavenging) and the TiN top electrode inhibited non-ferroelectric phase formation (by stress-induced crystallization). In addition, it was confirmed that the TiN top and bottom electrodes acted as a barrier layer to hydrogen diffusion into the HZO thin film during annealing in a hydrogen-containing atmosphere. These features make the TiN electrodes a useful strategy for improving and preserving the ferroelectric properties of HZO thin films for next-generation memory applications.

Original language	English
Article number	2968
Pages (from-to)	1-8
Number of pages	8
Journal	Materials
Volume	13
Issue number	13
DOIs	https://doi.org/10.3390/ma13132968
Publication status	Published - 2020 Jul 1

Keywords

Atomic layer deposition
Ferroelectric film
HfZrO
Low thermal budget process
TiN electrode

ASJC Scopus subject areas

Materials Science(all)

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10.3390/ma13132968

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Kim, S. J., Mohan, J., Kim, H. S., Hwang, S. M., Kim, N., Jung, Y. C., Sahota, A., Kim, K., Yu, H. Y., Cha, P. R., Young, C. D., Choi, R., Ahn, J., & Kim, J. (2020). A comprehensive study on the effect of tin top and bottom electrodes on atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films. Materials, 13(13), 1-8. [2968]. https://doi.org/10.3390/ma13132968

A comprehensive study on the effect of tin top and bottom electrodes on atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films. / Kim, Si Joon; Mohan, Jaidah; Kim, Harrison Sejoon; Hwang, Su Min; Kim, Namhun; Jung, Yong Chan; Sahota, Akshay; Kim, Kihyun; Yu, Hyun Yong; Cha, Pil Ryung; Young, Chadwin D.; Choi, Rino; Ahn, Jinho; Kim, Jiyoung.

In: Materials, Vol. 13, No. 13, 2968, 01.07.2020, p. 1-8.

Research output: Contribution to journal › Article

Kim, Si Joon ; Mohan, Jaidah ; Kim, Harrison Sejoon ; Hwang, Su Min ; Kim, Namhun ; Jung, Yong Chan ; Sahota, Akshay ; Kim, Kihyun ; Yu, Hyun Yong ; Cha, Pil Ryung ; Young, Chadwin D. ; Choi, Rino ; Ahn, Jinho ; Kim, Jiyoung. / A comprehensive study on the effect of tin top and bottom electrodes on atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films. In: Materials. 2020 ; Vol. 13, No. 13. pp. 1-8.

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abstract = "The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal budget process. Based on experiment demonstrations over the past 10 years, it is well known that HZO films show excellent ferroelectricity when sandwiched between TiN top and bottom electrodes. This work reports a comprehensive study on the effect of TiN top and bottom electrodes on the ferroelectric properties of HZO thin films (10 nm). Investigations showed that during HZO crystallization, the TiN bottom electrode promoted ferroelectric phase formation (by oxygen scavenging) and the TiN top electrode inhibited non-ferroelectric phase formation (by stress-induced crystallization). In addition, it was confirmed that the TiN top and bottom electrodes acted as a barrier layer to hydrogen diffusion into the HZO thin film during annealing in a hydrogen-containing atmosphere. These features make the TiN electrodes a useful strategy for improving and preserving the ferroelectric properties of HZO thin films for next-generation memory applications.",

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