A D-band Active Imager in a SiGe HBT Technology

Daekeun Yoon, Kiryong Song, Jungsoo Kim, Mehmet Kaynak, Bernd Tillack, Jae-Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, an amplifier and a detector operating near 140 GHz have been developed and integrated together with an on-chip antenna for an integrated active imager based on a 0.13-μm SiGe HBT technology. The 5-stage differential common-emitter (CE) amplifier shows a peak gain of 14 dB and noise figure (NF) down to 10 dB around 140 GHz with a DC power dissipation of 18 mW. The common-base (CB) differential detector exhibits a peak responsivity of 52.5 kV/W and a noise equivalent power (NEP) of 3.3 pW/Hz1/2. For the integrated imager, a peak responsivity of 1,740 kV/W and a minimum NEP of 80 fW/Hz1/2 were achieved with a DC power dissipation of 18 mW. With the fabricated active imager with on-chip antenna, which occupies an area of 2,200 × 600 μm2 including the antenna and bonding pads, images of various objects were successfully acquired.

Original languageEnglish
Pages (from-to)335-349
Number of pages15
JournalJournal of Infrared, Millimeter, and Terahertz Waves
Volume36
Issue number4
DOIs
Publication statusPublished - 2015

Keywords

  • bipolar integrated circuit
  • heterodyne bipolar transistors
  • imaging

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Fingerprint Dive into the research topics of 'A D-band Active Imager in a SiGe HBT Technology'. Together they form a unique fingerprint.

  • Cite this