A Dickson charge pump circuit driven by boosted clock for low-voltage flash memories

Hyoung Joo Kim; Gil Su Kim; Soo Won Kim

doi:10.1117/12.608672

A Dickson charge pump circuit driven by boosted clock for low-voltage flash memories

Hyoung Joo Kim, Gil Su Kim, Soo Won Kim

* Honorary professors

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

In this paper, a Dickson charge pump circuit driven by boosted clock for low-voltage flash memories is proposed. Voltage pumping gain of each stage can be considerably improved by using high-voltage clock instead of using conventional clock. Since the voltage gain of each stage can be considerably increased by using this method, it can generate a high output voltage although the body effect still exists. Simulation results show that it can generate enough voltage to apply to the flash memory even at a supply voltage less than 1.5V. Because this method can be applied to almost all types of the improved Dickson charge pump circuits, it is expected that this method will improve the performance of the high voltage generating circuits for low-voltage flash memories.

Original language	English
Article number	67
Pages (from-to)	605-612
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5837 PART II
DOIs	https://doi.org/10.1117/12.608672
Publication status	Published - 2005
Event	VLSI Circuits and Systems II - Seville, Spain Duration: 2005 May 9 → 2005 May 11

Keywords

Charge pump
Dickson
Flash
Low-voltage
Memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.608672

Cite this

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title = "A Dickson charge pump circuit driven by boosted clock for low-voltage flash memories",

abstract = "In this paper, a Dickson charge pump circuit driven by boosted clock for low-voltage flash memories is proposed. Voltage pumping gain of each stage can be considerably improved by using high-voltage clock instead of using conventional clock. Since the voltage gain of each stage can be considerably increased by using this method, it can generate a high output voltage although the body effect still exists. Simulation results show that it can generate enough voltage to apply to the flash memory even at a supply voltage less than 1.5V. Because this method can be applied to almost all types of the improved Dickson charge pump circuits, it is expected that this method will improve the performance of the high voltage generating circuits for low-voltage flash memories.",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "VLSI Circuits and Systems II ; Conference date: 09-05-2005 Through 11-05-2005",

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T1 - A Dickson charge pump circuit driven by boosted clock for low-voltage flash memories

AU - Kim, Hyoung Joo

AU - Kim, Gil Su

AU - Kim, Soo Won

PY - 2005

Y1 - 2005

N2 - In this paper, a Dickson charge pump circuit driven by boosted clock for low-voltage flash memories is proposed. Voltage pumping gain of each stage can be considerably improved by using high-voltage clock instead of using conventional clock. Since the voltage gain of each stage can be considerably increased by using this method, it can generate a high output voltage although the body effect still exists. Simulation results show that it can generate enough voltage to apply to the flash memory even at a supply voltage less than 1.5V. Because this method can be applied to almost all types of the improved Dickson charge pump circuits, it is expected that this method will improve the performance of the high voltage generating circuits for low-voltage flash memories.

AB - In this paper, a Dickson charge pump circuit driven by boosted clock for low-voltage flash memories is proposed. Voltage pumping gain of each stage can be considerably improved by using high-voltage clock instead of using conventional clock. Since the voltage gain of each stage can be considerably increased by using this method, it can generate a high output voltage although the body effect still exists. Simulation results show that it can generate enough voltage to apply to the flash memory even at a supply voltage less than 1.5V. Because this method can be applied to almost all types of the improved Dickson charge pump circuits, it is expected that this method will improve the performance of the high voltage generating circuits for low-voltage flash memories.

KW - Charge pump

KW - Dickson

KW - Flash

KW - Low-voltage

KW - Memory

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A Dickson charge pump circuit driven by boosted clock for low-voltage flash memories

Abstract

Keywords

ASJC Scopus subject areas

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