A direct metal transfer method for cross-bar type polymer non-volatile memory applications

Tae Wook Kim, Kyeongmi Lee, Seung Hwan Oh, Gunuk Wang, Dong Yu Kim, Gun Young Jung, Takhee Lee

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Polymer non-volatile memory devices in 8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.

Original languageEnglish
Article number405201
JournalNanotechnology
Volume19
Issue number40
DOIs
Publication statusPublished - 2008 Oct 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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