A direct metal transfer method for cross-bar type polymer non-volatile memory applications

Tae Wook Kim, Kyeongmi Lee, Seung Hwan Oh, Gunuk Wang, Dong Yu Kim, Gun Young Jung, Takhee Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Polymer non-volatile memory devices in 8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.

Original languageEnglish
Article number405201
JournalNanotechnology
Volume19
Issue number40
DOIs
Publication statusPublished - 2008 Oct 1
Externally publishedYes

Fingerprint

Polymers
Metals
Data storage equipment
Equipment and Supplies
Linewidth
Masks
Heat treatment
Transfer (Psychology)
Electrodes
Hot Temperature

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

A direct metal transfer method for cross-bar type polymer non-volatile memory applications. / Kim, Tae Wook; Lee, Kyeongmi; Oh, Seung Hwan; Wang, Gunuk; Kim, Dong Yu; Jung, Gun Young; Lee, Takhee.

In: Nanotechnology, Vol. 19, No. 40, 405201, 01.10.2008.

Research output: Contribution to journalArticle

Kim, Tae Wook ; Lee, Kyeongmi ; Oh, Seung Hwan ; Wang, Gunuk ; Kim, Dong Yu ; Jung, Gun Young ; Lee, Takhee. / A direct metal transfer method for cross-bar type polymer non-volatile memory applications. In: Nanotechnology. 2008 ; Vol. 19, No. 40.
@article{fc686f13258a4b6491cfee409b8a60b0,
title = "A direct metal transfer method for cross-bar type polymer non-volatile memory applications",
abstract = "Polymer non-volatile memory devices in 8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.",
author = "Kim, {Tae Wook} and Kyeongmi Lee and Oh, {Seung Hwan} and Gunuk Wang and Kim, {Dong Yu} and Jung, {Gun Young} and Takhee Lee",
year = "2008",
month = "10",
day = "1",
doi = "10.1088/0957-4484/19/40/405201",
language = "English",
volume = "19",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "40",

}

TY - JOUR

T1 - A direct metal transfer method for cross-bar type polymer non-volatile memory applications

AU - Kim, Tae Wook

AU - Lee, Kyeongmi

AU - Oh, Seung Hwan

AU - Wang, Gunuk

AU - Kim, Dong Yu

AU - Jung, Gun Young

AU - Lee, Takhee

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Polymer non-volatile memory devices in 8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.

AB - Polymer non-volatile memory devices in 8 × 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices.

UR - http://www.scopus.com/inward/record.url?scp=51349159205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349159205&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/19/40/405201

DO - 10.1088/0957-4484/19/40/405201

M3 - Article

VL - 19

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 40

M1 - 405201

ER -