A direct observation of the distributions of local trapped-charges and the interface-states near the drain region of the silicon-oxide-nitride-oxide- silicon device for reliable four-bit/cell operations

Ho Myoung An, Yongjie Zhang, Hee Dong Kim, Yu Jeong Seo, Byungcheul Kim, Joo Yeon Kim, Tae Geun Kim

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Engineering & Materials Science

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