A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness

Dae Won Kim, Man Young Sung, Ey Goo Kang

Research output: Contribution to journalArticle

Abstract

In this paper, the dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with anode voltage and current density of 2.73 V and 35 A/cm2, respectively. The proposed DTG-EST exhibits snap-back with anode voltage and current density of 0.96 V and 100 A/cm2, respectively. The saturated anode current density of the proposed DTG-EST at an anode voltage 9.6 V is 2388 A/cm 2. The characteristics of the 600 V forward blocking DTG-EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST and a vertical trench gate EST.

Original languageEnglish
Pages (from-to)50-57
Number of pages8
JournalMicroelectronic Engineering
Volume70
Issue number1
DOIs
Publication statusPublished - 2003 Oct 1

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thyristors
Thyristors
Oxides
emitters
Electrodes
electrodes
oxides
Anodes
Current density
anodes
current density
Electric potential
electric potential
current distribution
Computer simulation
saturation

Keywords

  • Dual trench gate
  • Forward blocking
  • Parasitic thyristor
  • Snap-back

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness. / Kim, Dae Won; Sung, Man Young; Kang, Ey Goo.

In: Microelectronic Engineering, Vol. 70, No. 1, 01.10.2003, p. 50-57.

Research output: Contribution to journalArticle

@article{e88214c6990845e6bbb8fbb113227859,
title = "A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness",
abstract = "In this paper, the dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with anode voltage and current density of 2.73 V and 35 A/cm2, respectively. The proposed DTG-EST exhibits snap-back with anode voltage and current density of 0.96 V and 100 A/cm2, respectively. The saturated anode current density of the proposed DTG-EST at an anode voltage 9.6 V is 2388 A/cm 2. The characteristics of the 600 V forward blocking DTG-EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST and a vertical trench gate EST.",
keywords = "Dual trench gate, Forward blocking, Parasitic thyristor, Snap-back",
author = "Kim, {Dae Won} and Sung, {Man Young} and Kang, {Ey Goo}",
year = "2003",
month = "10",
day = "1",
doi = "10.1016/S0167-9317(03)00390-3",
language = "English",
volume = "70",
pages = "50--57",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness

AU - Kim, Dae Won

AU - Sung, Man Young

AU - Kang, Ey Goo

PY - 2003/10/1

Y1 - 2003/10/1

N2 - In this paper, the dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with anode voltage and current density of 2.73 V and 35 A/cm2, respectively. The proposed DTG-EST exhibits snap-back with anode voltage and current density of 0.96 V and 100 A/cm2, respectively. The saturated anode current density of the proposed DTG-EST at an anode voltage 9.6 V is 2388 A/cm 2. The characteristics of the 600 V forward blocking DTG-EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST and a vertical trench gate EST.

AB - In this paper, the dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with anode voltage and current density of 2.73 V and 35 A/cm2, respectively. The proposed DTG-EST exhibits snap-back with anode voltage and current density of 0.96 V and 100 A/cm2, respectively. The saturated anode current density of the proposed DTG-EST at an anode voltage 9.6 V is 2388 A/cm 2. The characteristics of the 600 V forward blocking DTG-EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST and a vertical trench gate EST.

KW - Dual trench gate

KW - Forward blocking

KW - Parasitic thyristor

KW - Snap-back

UR - http://www.scopus.com/inward/record.url?scp=0141754204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141754204&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(03)00390-3

DO - 10.1016/S0167-9317(03)00390-3

M3 - Article

AN - SCOPUS:0141754204

VL - 70

SP - 50

EP - 57

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1

ER -