A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Donghyuk Yeom, Dong Young Jeong, Byung-Moo Moon, Sangsig Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)


In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.

Original languageEnglish
Pages (from-to)1622-1626
Number of pages5
JournalMicroelectronic Engineering
Issue number5-8
Publication statusPublished - 2007 May 1



  • Fabrication
  • FET
  • Nanowire
  • Photolithography
  • Top-gate

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

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