A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Donghyuk Yeom, Dong Young Jeong, Byung-Moo Moon, Sangsig Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

In this study, top-gate ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V measurements. Their electrical characteristics were compared with those of back-gate ZnO nanowire FETs. The fabricated nanowire FETs exhibit good contact between the ZnO nanowire channels and Ti metal electrodes. A representative top-gate FET showed a higher gate dependence than a representative back-gate FET; the peak transconductances of the back- and top-gate FETs were 19 nS and 248 nS, respectively. These characteristics reveal that the top-gate nanowire FET fabricated by the photolithography process has better performance. The fabrication technique used for the nanowire FETs by a photolithography process in this study is applicable to the fabrication of various devices including TFTs, memory devices, photodetectors, and so on.

Original languageEnglish
Pages (from-to)1622-1626
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
Publication statusPublished - 2007 May 1

Fingerprint

Gates (transistor)
Photolithography
photolithography
Field effect transistors
Nanowires
nanowires
field effect transistors
Fabrication
fabrication
Transconductance
Photodetectors
Electric properties
transconductance
Metals
photometers
Data storage equipment
Electrodes
electrical properties
electrodes
metals

Keywords

  • Fabrication
  • FET
  • Nanowire
  • Photolithography
  • Top-gate

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process. / Keem, Kihyun; Kang, Jeongmin; Yoon, Changjoon; Yeom, Donghyuk; Jeong, Dong Young; Moon, Byung-Moo; Kim, Sangsig.

In: Microelectronic Engineering, Vol. 84, No. 5-8, 01.05.2007, p. 1622-1626.

Research output: Contribution to journalArticle

Keem, Kihyun ; Kang, Jeongmin ; Yoon, Changjoon ; Yeom, Donghyuk ; Jeong, Dong Young ; Moon, Byung-Moo ; Kim, Sangsig. / A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process. In: Microelectronic Engineering. 2007 ; Vol. 84, No. 5-8. pp. 1622-1626.
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