A facile method for flexible GaN-based light-emitting diodes

Younghun Jung, Xiaotie Wang, Sung Hyun Kim, Fan Ren, Ji Hyun Kim, Stephen J. Pearton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Flexible GaN-based light-emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift-off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free-standing LLO-LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters.

Original languageEnglish
Pages (from-to)421-423
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume6
Issue number11
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Polyethylene Terephthalates
Light emitting diodes
polyethylene terephthalate
light emitting diodes
Polyethylene terephthalates
Substrates
Wet etching
Lasers
Aluminum Oxide
mounting
Mountings
Sapphire
lasers
sapphire
Electric properties
Optical properties
electrical properties
etching
wafers
optical properties

Keywords

  • Flexible electronics
  • Laser lift-off
  • Light-emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

A facile method for flexible GaN-based light-emitting diodes. / Jung, Younghun; Wang, Xiaotie; Kim, Sung Hyun; Ren, Fan; Kim, Ji Hyun; Pearton, Stephen J.

In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 11, 01.11.2012, p. 421-423.

Research output: Contribution to journalArticle

Jung, Younghun ; Wang, Xiaotie ; Kim, Sung Hyun ; Ren, Fan ; Kim, Ji Hyun ; Pearton, Stephen J. / A facile method for flexible GaN-based light-emitting diodes. In: Physica Status Solidi - Rapid Research Letters. 2012 ; Vol. 6, No. 11. pp. 421-423.
@article{e1d6e93dbcb749d18678479896eccb8e,
title = "A facile method for flexible GaN-based light-emitting diodes",
abstract = "Flexible GaN-based light-emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift-off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free-standing LLO-LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters.",
keywords = "Flexible electronics, Laser lift-off, Light-emitting diodes",
author = "Younghun Jung and Xiaotie Wang and Kim, {Sung Hyun} and Fan Ren and Kim, {Ji Hyun} and Pearton, {Stephen J.}",
year = "2012",
month = "11",
day = "1",
doi = "10.1002/pssr.201206374",
language = "English",
volume = "6",
pages = "421--423",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "11",

}

TY - JOUR

T1 - A facile method for flexible GaN-based light-emitting diodes

AU - Jung, Younghun

AU - Wang, Xiaotie

AU - Kim, Sung Hyun

AU - Ren, Fan

AU - Kim, Ji Hyun

AU - Pearton, Stephen J.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - Flexible GaN-based light-emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift-off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free-standing LLO-LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters.

AB - Flexible GaN-based light-emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift-off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free-standing LLO-LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters.

KW - Flexible electronics

KW - Laser lift-off

KW - Light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=84869103246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869103246&partnerID=8YFLogxK

U2 - 10.1002/pssr.201206374

DO - 10.1002/pssr.201206374

M3 - Article

VL - 6

SP - 421

EP - 423

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 11

ER -