A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells

Hyunik Park, Kwang Hyeon Baik, Ji Hyun Kim, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO2 nanosphere lithography and dry-etch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga + -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics.

Original languageEnglish
Pages (from-to)12908-12913
Number of pages6
JournalOptics Express
Volume21
Issue number10
DOIs
Publication statusPublished - 2013 May 20

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nanorods
light emitting diodes
quantum wells
ion beams
contact resistance
electroluminescence
lithography
damage
electric potential
thin films
ions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. / Park, Hyunik; Baik, Kwang Hyeon; Kim, Ji Hyun; Ren, Fan; Pearton, Stephen J.

In: Optics Express, Vol. 21, No. 10, 20.05.2013, p. 12908-12913.

Research output: Contribution to journalArticle

Park, Hyunik ; Baik, Kwang Hyeon ; Kim, Ji Hyun ; Ren, Fan ; Pearton, Stephen J. / A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. In: Optics Express. 2013 ; Vol. 21, No. 10. pp. 12908-12913.
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