A flexible amorphous Bi 5Nb 3O 15 Film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature

Kyung Hoon Cho, Tae Geun Seong, Joo Young Choi, Jin Seong Kim, Jae Hong Kwon, Sang Il Shin, Myung Ho Chung, Byeong Kwon Ju, Sahn Nahm

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The amorphous Bi 5Nb 3O 15 film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O 2 film) has a hydrophobic surface with a surface energy of 35.6 mJ m -2, which is close to that of the orthorhombic pentacene (38 mJ m -2), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm -2 during and after 105 bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacenebased, organic thin-film transistors (OTFTs) fabricated on the poly(ether sulfone) substrate at room temperature using a BNRT-O2 film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm 2 V -1 s -1, an on/off current modulation of 105, and a small subthreshold slope of 0.2 V decade -1 under a low operating voltage of -5 V. This device also maintained a high carrier mobility of 0.45 cm 2 V -1 s -1 during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O 2 film is considered a promising material for the gate insulator of the flexible, pentacene-based OTF

Original languageEnglish
Pages (from-to)12349-12354
Number of pages6
JournalLangmuir
Volume25
Issue number20
DOIs
Publication statusPublished - 2009 Oct 20

Fingerprint

Thin film transistors
low voltage
transistors
insulators
Temperature
Electric potential
room temperature
thin films
Equipment and Supplies
Sulfones
Ether
Polymers
curvature
Oxygen
optical transfer function
sulfones
radii
Carrier mobility
oxygen plasma
carrier mobility

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science(all)
  • Spectroscopy

Cite this

A flexible amorphous Bi 5Nb 3O 15 Film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature. / Cho, Kyung Hoon; Seong, Tae Geun; Choi, Joo Young; Kim, Jin Seong; Kwon, Jae Hong; Shin, Sang Il; Chung, Myung Ho; Ju, Byeong Kwon; Nahm, Sahn.

In: Langmuir, Vol. 25, No. 20, 20.10.2009, p. 12349-12354.

Research output: Contribution to journalArticle

Cho, Kyung Hoon ; Seong, Tae Geun ; Choi, Joo Young ; Kim, Jin Seong ; Kwon, Jae Hong ; Shin, Sang Il ; Chung, Myung Ho ; Ju, Byeong Kwon ; Nahm, Sahn. / A flexible amorphous Bi 5Nb 3O 15 Film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature. In: Langmuir. 2009 ; Vol. 25, No. 20. pp. 12349-12354.
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