A flexible amorphous Bi 5Nb 3O 15 Film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature

Kyung Hoon Cho, Tae Geun Seong, Joo Young Choi, Jin Seong Kim, Jae Hong Kwon, Sang Il Shin, Myung Ho Chung, Byeong Kwon Ju, Sahn Nahm

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The amorphous Bi 5Nb 3O 15 film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O 2 film) has a hydrophobic surface with a surface energy of 35.6 mJ m -2, which is close to that of the orthorhombic pentacene (38 mJ m -2), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm -2 during and after 105 bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacenebased, organic thin-film transistors (OTFTs) fabricated on the poly(ether sulfone) substrate at room temperature using a BNRT-O2 film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm 2 V -1 s -1, an on/off current modulation of 105, and a small subthreshold slope of 0.2 V decade -1 under a low operating voltage of -5 V. This device also maintained a high carrier mobility of 0.45 cm 2 V -1 s -1 during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O 2 film is considered a promising material for the gate insulator of the flexible, pentacene-based OTF

Original languageEnglish
Pages (from-to)12349-12354
Number of pages6
JournalLangmuir
Volume25
Issue number20
DOIs
Publication statusPublished - 2009 Oct 20

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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