A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric

Jae Hong Kwon; Sang Il Shin; Jinnil Choi; Myung Ho Chung; Hochul Kang; Byeong Kwon Ju

doi:10.1016/j.sse.2008.12.002

A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric

Jae Hong Kwon, Sang Il Shin, Jinnil Choi, Myung Ho Chung, Hochul Kang, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm²/V s for an OTFT fabricated on a wafer and 0.004 cm²/V s for an OTFT fabricated on a PES substrate. Crown

Original language	English
Pages (from-to)	266-270
Number of pages	5
Journal	Solid-State Electronics
Volume	53
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2008.12.002
Publication status	Published - 2009 Mar

Keywords

6,13-Bis(triisopropylsilylethynyl)pentacene
Methyl-siloxane-based spin-on glass
Organic thin-film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{91651b7a34714d34af4b206b1d34b5a7,

title = "A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric",

abstract = "In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm2/V s for an OTFT fabricated on a wafer and 0.004 cm2/V s for an OTFT fabricated on a PES substrate. Crown",

keywords = "6,13-Bis(triisopropylsilylethynyl)pentacene, Methyl-siloxane-based spin-on glass, Organic thin-film transistor",

author = "Kwon, {Jae Hong} and Shin, {Sang Il} and Jinnil Choi and Chung, {Myung Ho} and Hochul Kang and Ju, {Byeong Kwon}",

year = "2009",

month = mar,

doi = "10.1016/j.sse.2008.12.002",

language = "English",

volume = "53",

pages = "266--270",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric

AU - Kwon, Jae Hong

AU - Shin, Sang Il

AU - Choi, Jinnil

AU - Chung, Myung Ho

AU - Kang, Hochul

AU - Ju, Byeong Kwon

PY - 2009/3

Y1 - 2009/3

N2 - In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm2/V s for an OTFT fabricated on a wafer and 0.004 cm2/V s for an OTFT fabricated on a PES substrate. Crown

AB - In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm2/V s for an OTFT fabricated on a wafer and 0.004 cm2/V s for an OTFT fabricated on a PES substrate. Crown

KW - 6,13-Bis(triisopropylsilylethynyl)pentacene

KW - Methyl-siloxane-based spin-on glass

KW - Organic thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=61349191531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=61349191531&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2008.12.002

DO - 10.1016/j.sse.2008.12.002

M3 - Article

AN - SCOPUS:61349191531

VL - 53

SP - 266

EP - 270

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -