@article{91651b7a34714d34af4b206b1d34b5a7,
title = "A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl)pentacene and a methyl-siloxane-based dielectric",
abstract = "In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm2/V s for an OTFT fabricated on a wafer and 0.004 cm2/V s for an OTFT fabricated on a PES substrate. Crown",
keywords = "6,13-Bis(triisopropylsilylethynyl)pentacene, Methyl-siloxane-based spin-on glass, Organic thin-film transistor",
author = "Kwon, {Jae Hong} and Shin, {Sang Il} and Jinnil Choi and Chung, {Myung Ho} and Hochul Kang and Ju, {Byeong Kwon}",
note = "Funding Information: This work was supported by the National Research Laboratory (NRL, R0A-2007-000-20111-0) Program of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea Ministry of Education, Science and Technology (MEST) (No. R11-2007-045-01003-0), and the second stage of the Brain Korea 21 Project in 2008 (Korea Research Foundation). We are indebted to Sung-Do Kwon (Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Wolsong-Gil 5, Seongbuk-Gu, Seoul 136-791, Korea), Jung-Min Lee (Electronic Materials Laboratory, Korea Institute of Ceramic ENG & TECH, Guemcheon-Gu Seoul, 233-5, Korea), and In-Sung Hwang (Electronic Functional Materials Laboratory, College of Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea) for the electron-beam evaporation process, XRD spectroscopy, and FTIR measurements, respectively. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",
year = "2009",
month = mar,
doi = "10.1016/j.sse.2008.12.002",
language = "English",
volume = "53",
pages = "266--270",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",
}