A full X-band CMOS amplifier with wideband class-E harmonic matching

Seungwon Park, Sanggeun Jeon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A fully integrated medium power amplifier operating over the entire X-band is demonstrated in a 0.11-μm CMOS technology. A double-resonance technique is used for wideband input matching. At the output load, wideband class-E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small-signal gain exceeding 7.6 dB over a wide 3-dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X-band (8-12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz.

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume57
Issue number3
DOIs
Publication statusPublished - 2015 Jan 1

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superhigh frequencies
CMOS
amplifiers
broadband
harmonics
output
power efficiency
Power amplifiers
power amplifiers
Bandwidth
bandwidth

Keywords

  • Class-E amplifier
  • Full X-band
  • Medium power amplifier
  • Wideband harmonic matching

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A full X-band CMOS amplifier with wideband class-E harmonic matching. / Park, Seungwon; Jeon, Sanggeun.

In: Microwave and Optical Technology Letters, Vol. 57, No. 3, 01.01.2015, p. 645-649.

Research output: Contribution to journalArticle

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