Abstract
A fully integrated medium power amplifier operating over the entire X-band is demonstrated in a 0.11-μm CMOS technology. A double-resonance technique is used for wideband input matching. At the output load, wideband class-E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small-signal gain exceeding 7.6 dB over a wide 3-dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X-band (8-12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 645-649 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 57 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Mar 1 |
Keywords
- Class-E amplifier
- Full X-band
- Medium power amplifier
- Wideband harmonic matching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering