A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology

Iljin Lee, Junghyun Kim, Sanggeun Jeon

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalJournal of Electromagnetic Engineering and Science
Volume17
Issue number3
DOIs
Publication statusPublished - 2017 Jul 1

Fingerprint

Frequency doublers
Transistors
output
transistors
impedance
harmonics
oscillations

Keywords

  • Frequency doubler
  • G-Band
  • GaAs pHEMT
  • Harmonic matching

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation
  • Radiation

Cite this

A G-band frequency doubler using a commercial 150 nm GaAs pHEMT technology. / Lee, Iljin; Kim, Junghyun; Jeon, Sanggeun.

In: Journal of Electromagnetic Engineering and Science, Vol. 17, No. 3, 01.07.2017, p. 147-152.

Research output: Contribution to journalArticle

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