A GaAs p-HEMT Distributed Drain Mixer with Low LO Drive Power, High Isolation, and Zero Power Consumption

Hyunkyu Lee, Sanggeun Jeon

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a balanced distributed drain mixer fabricated in a 0.25-μ m GaAs p-HEMT technology. The balanced distributed mixer combines two single-ended distributed mixers with an on-chip RF balun and LO divider integrated for improving isolation performance. Each single-ended mixer is designed with three drain-mixing unit cells distributed along transmission lines for broadband operation. The transistor size, bias condition and transmission line lengths are analyzed and determined to improve the conversion gain, bandwidth and impedance matching. In addition, the LO drive power required for mixing operation is reduced by bias optimization and large-signal LO matching. The balanced distributed drain mixer exhibits measured conversion gain of-4.0 to-7.4 dB from 5.4 to 21.8 GHz. The LO drive power of the mixer is as low as 2 dBm. The LO-to-RF and LO-to-IF isolation are higher than 23.5 and 54.7 dB, respectively. The mixer consumes no dc power due to the passive drain-mixing topology.

Original languageEnglish
Pages (from-to)158420-158425
Number of pages6
JournalIEEE Access
Volume9
DOIs
Publication statusPublished - 2021

Keywords

  • Distributed mixer
  • GaAs
  • MMIC
  • Millimeter-wave
  • Wideband
  • Zero dc power

ASJC Scopus subject areas

  • Computer Science(all)
  • Materials Science(all)
  • Engineering(all)

Fingerprint

Dive into the research topics of 'A GaAs p-HEMT Distributed Drain Mixer with Low LO Drive Power, High Isolation, and Zero Power Consumption'. Together they form a unique fingerprint.

Cite this