A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Sung Jin An, Jong Min Yook, Tae Woong Yoon, Hyeok Kim, Jun Chul Kim, Jong Gwan Yook, Youngcheol Park, Dongsu Kim

Research output: Contribution to journalArticle


This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

Original languageEnglish
Pages (from-to)2178-2182
Number of pages5
JournalMicrowave and Optical Technology Letters
Issue number9
Publication statusPublished - 2016 Sep 1
Externally publishedYes


  • GaN HEMT
  • harmonic control
  • high efficiency
  • power amplifier
  • quasi-MMIC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Jin An, S., Min Yook, J., Yoon, T. W., Kim, H., Chul Kim, J., Yook, J. G., Park, Y., & Kim, D. (2016). A high-efficiency gan power amplifier with harmonic control based on Si-IPDS. Microwave and Optical Technology Letters, 58(9), 2178-2182. https://doi.org/10.1002/mop.30003