A high performance of dual-gate TFTs with triple floating N+ channel

Hyung Seok Park, Dae Yeon Lee, Min Chul Jung, Seung Woo Hong, Man Young Sung, Ey Goo Kang, Dong Hee Rhie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

Original languageEnglish
Title of host publicationProceedings of the Second Americas Display Engineering and Applications Conference, ADEAC 2005
Pages448-451
Number of pages4
Publication statusPublished - 2005 Dec 1
EventSecond Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States
Duration: 2005 Oct 252005 Oct 27

Other

OtherSecond Americas Display Engineering and Applications Conference, ADEAC 2005
CountryUnited States
CityPortland, OR
Period05/10/2505/10/27

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Park, H. S., Lee, D. Y., Jung, M. C., Hong, S. W., Sung, M. Y., Kang, E. G., & Rhie, D. H. (2005). A high performance of dual-gate TFTs with triple floating N+ channel. In Proceedings of the Second Americas Display Engineering and Applications Conference, ADEAC 2005 (pp. 448-451)