We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.
|Number of pages||4|
|Publication status||Published - 2005|
|Event||Second Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States|
Duration: 2005 Oct 25 → 2005 Oct 27
|Other||Second Americas Display Engineering and Applications Conference, ADEAC 2005|
|Period||05/10/25 → 05/10/27|
ASJC Scopus subject areas