Abstract
We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.
| Original language | English |
|---|---|
| Pages | 448-451 |
| Number of pages | 4 |
| Publication status | Published - 2005 |
| Event | Second Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States Duration: 2005 Oct 25 → 2005 Oct 27 |
Other
| Other | Second Americas Display Engineering and Applications Conference, ADEAC 2005 |
|---|---|
| Country/Territory | United States |
| City | Portland, OR |
| Period | 05/10/25 → 05/10/27 |
ASJC Scopus subject areas
- Engineering(all)