Abstract
We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.
Original language | English |
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Pages (from-to) | 448-451 |
Number of pages | 4 |
Journal | SID Conference Record of the International Display Research Conference |
Volume | 2005 |
Publication status | Published - 2005 |
Event | 25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom Duration: 2005 Sept 20 → 2005 Sept 22 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering