We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.
|Number of pages||4|
|Journal||SID Conference Record of the International Display Research Conference|
|Publication status||Published - 2005 Dec 1|
|Event||25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom|
Duration: 2005 Sep 20 → 2005 Sep 22
ASJC Scopus subject areas
- Electrical and Electronic Engineering