A high performance of dual-gate TFTs with triple floating n+ channel

Hyung Seok Park, Dae Yeon Lee, Min Chul Jung, Seung Woo Hong, Man Young Sung, Ey Goo Kang, Dong Hee Rhie

Research output: Contribution to journalConference article

Abstract

We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

Original languageEnglish
Pages (from-to)448-451
Number of pages4
JournalSID Conference Record of the International Display Research Conference
Volume2005
Publication statusPublished - 2005 Dec 1
Event25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom
Duration: 2005 Sep 202005 Sep 22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Park, H. S., Lee, D. Y., Jung, M. C., Hong, S. W., Sung, M. Y., Kang, E. G., & Rhie, D. H. (2005). A high performance of dual-gate TFTs with triple floating n+ channel. SID Conference Record of the International Display Research Conference, 2005, 448-451.