A high-power solid-state RF source driven by a doublydifferential signal

Sanggeun Jeon, David B. Rutledge

Research output: Contribution to journalArticle

Abstract

This letter presents a new solid-state RF source generating kW-level output power at HF band. Four power transistors are driven in a doubly-differential way, operated in a switching mode, and combined together to produce high output power. A multilayered input feed network is carefully designed, such that an accurate doubly-differential signal is provided to the transistors. The output matching and combining circuitry is optimized toward a high efficiency. The implemented RF source produces a CW signal of 1.5 kW at 29 MHz with a drain efficiency of 85%. The measured high efficiency is attributed to the well-balanced and symmetric switching-mode operation of each transistor, which is verified experimentally by a thermal image.

Original languageEnglish
Pages (from-to)1489-1492
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume52
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

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transistors
solid state
output
Transistors
Hot Temperature
Power transistors

Keywords

  • Doubly-differential drive
  • HF band
  • High efficiency
  • KW-level RF source
  • Switching mode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

A high-power solid-state RF source driven by a doublydifferential signal. / Jeon, Sanggeun; Rutledge, David B.

In: Microwave and Optical Technology Letters, Vol. 52, No. 7, 01.07.2010, p. 1489-1492.

Research output: Contribution to journalArticle

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